Datasheet > SS8550T

SS8550T

更新时间： 2024-11-14 09:05:55

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	106K
描述
PNP Silicon General Purpose Transistor

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SS8550T 数据手册

SS8550T

PNP Silicon

Elektronische Bauelemente

General Purpose Transistor

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

TO-92

FEATURES

Power dissipation

P^CM: 1 W

Collector Current

I^CM: -1.5 A

Collector-base voltage

V(BR)CBO : - 40 V

2 3

Operating & storage junction temperature

T^j, Tstg : - 55^OC ~ + 150^OC

1. EMITTER

2. BASS

COLLECTOR

ELECTRICAL CHARACTERISTICS ( Tamp.=25^OC unless otherwise specified)

Parameter

Symbol

Test

conditions

I_E=0

MIN

-40

-25

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

(BR)CBO

Ic= -100

μ ，

Ic= -0.1mA I_B=0

，

(BR)CEO

(BR)EBO

I =-100

I_C=0

μ ，

I_CBO

V_CB=-40 V , I_E=0

-0.1

400

Collector cut-off current

I_CEO

V_CE=-20V, I_B=0

Emitter cut-off current

I_EBO

V_EB= -5V, I_C=0

H_FE(1)

H_FE(2)

V_CE(sat)

V_BE(sat)

V_CE=-1V, I_C= -100mA

V_CE=-1V, I_C= -800mA

I_C=-800 mA, I_B=-80mA

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

-0.5

-1.2

I_C=-800 mA, I_B=-80mA

V_CE=-10V, I_C= -50mA

Transition frequency

100

MHz

f_T

f=30MHz

CLASSIFICATION OF h_FE(1)

Rank

Range

85-160

120-200

160-300

300-400

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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