Datasheet > SS8550-TO-92

SS8550-TO-92

更新时间： 2024-11-15 01:25:31

品牌	Logo	应用领域
海德 - HDSEMI		/
页数	文件大小	规格书
4页	2517K
描述
TO-92 Plastic-Encapsulate Transistors

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SS8550-TO-92 数据手册

SS8550

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR( P NP )

Features

TO- 9 2

●

Complimentary to SS8050

Collector Current: I_C=-1.5A

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-40

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-25

E B C

-5

-1.5

Junction Temperature

Storage Temperature

150

T_j

℃

T_stg

-55～+150

Electrical Characteristics (T=25℃ Unless otherwise specified）

Parameter

Symbol

Test

conditions

Min

-40

-25

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-100uA, I_E=0

V_(BR)CEOI_C=-0.1mA, I_B=0

V_(BR)EBOI_E=-100μA, I_C=0

I_CBO

I_CEO

V_CB=-40V, I_E=0

-0.1

400

μA

Emitter cut-off current

V_CE=-20V, I_E=0

Emitter cut-off current

I_EBO

V_EB=-5V, I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

V_BE(on)

Co_b

V_CE=-1V, I_C=-100mA

V_CE=-1V, I_C=-800mA

I_C=-800mA, I_B=-80mA

V_CE=-1V, I_C=-10mA

V_CB=-10V, I_E=0mA,f=1MH_Z

V_CE=-10V, I_C=-50mA,f=30MH_Z

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

-0.5

-1.2

-1

Out capacitance

MHz

Transition frequency

f_T

100

CLASSIFICATION OF h_{FE (2)}

Rank

Range

85-160

120-200

160-300

300-400

igh Diode Semiconductor

12 3 4

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