SS82 - SS810
SURFACE MOUNT SCHOTTKY BARRIER DIODES
VOLTAGE RANGE: 20 - 100V
CURRENT: 8 .0 A
Features
!
!
Schottky Barrier Chip
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
!
!
!
For Use in Low Voltage Application
Guard Ring Die Construction
!
Plastic Case Material has UL Flammability
Classification Rating 94V-O
B
SMC/DO-214AB
Dim
A
Min
5.59
6.60
2.75
0.15
7.75
0.10
0.76
2.00
Max
6.22
7.11
3.18
0.31
8.13
0.20
1.52
2.62
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Mechanical Data
A
C
B
!
!
Case: SMC/DO-214AB, Molded Plastic
C
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
D
D
E
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
J
G
H
!
!
!
G
H
J
Weight: 0.21 grams (approx.)
E
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
TA = 25ꢀC unless otherwise specified
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
Symbol SS82 SS83 SS835 SS84 SS85 SS86 SS88 SS810 Unit
RRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RWM
20
14
30
21
35
40
28
50
35
60
42
80
56
100
70
V
R
V
R(RMS)
RMS Reverse Voltage
V
V
A
24.5
O
Average Rectified Output Current @TL = 90°C
I
8.0
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
FSM
I
200.0
A
FM
Forward Voltage
@IF = 8.0A
V
0.85
V
0.65
Peak Reverse Current
At Rated DC Blocking Voltage @TA = 100°C
@TA = 25°C
1.0
20
RM
I
mA
pF
°C/W
°C
Typical junction capacitance (Note1)
CJ
400
JA
Rꢀ
Typical Thermal Resistance (Note 2)
18
j
Operating Temperature Range
Storage Temperature Range
Note:
T
-65 to +125
-65 to +150
STG
T
°C
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2
”(5.0x5.0mm) copper pad areas
1 of 2
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