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SS5P10HM3_A/H PDF预览

SS5P10HM3_A/H

更新时间: 2024-11-01 19:47:23
品牌 Logo 应用领域
威世 - VISHAY PC功效瞄准线测试光电二极管
页数 文件大小 规格书
5页 85K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN

SS5P10HM3_A/H 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMPC, 3 PINReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:12 weeks风险等级:5.63
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.88 VJEDEC-95代码:TO-277A
JESD-30 代码:R-PDSO-F3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE参考标准:AEC-Q101
最大重复峰值反向电压:100 V最大反向电流:15 µA
反向测试电压:100 V表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

SS5P10HM3_A/H 数据手册

 浏览型号SS5P10HM3_A/H的Datasheet PDF文件第2页浏览型号SS5P10HM3_A/H的Datasheet PDF文件第3页浏览型号SS5P10HM3_A/H的Datasheet PDF文件第4页浏览型号SS5P10HM3_A/H的Datasheet PDF文件第5页 
SS5P9, SS5P10  
Vishay General Semiconductor  
www.vishay.com  
High Current Density Surface Mount  
Schottky Barrier Rectifiers  
FEATURES  
Available  
• Very low profile - typical height of 1.1 mm  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low forward voltage drop, low power losses  
• High efficiency  
eSMP® Series  
K
• Low thermal resistance  
1
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
2
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHM3  
TO-277A (SMPC)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Anode 1  
Anode 2  
K
Cathode  
TYPICAL APPLICATIONS  
For use in high frequency rectifier of switching mode power  
supplies, freewheeling diodes, DC/DC converters, and  
polarity protection application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
5.0 A  
MECHANICAL DATA  
VRRM  
90 V, 100 V  
150 A  
Case: TO-277A (SMPC)  
Molding compound meets UL 94 V-0 flammability rating  
IFSM  
Base P/N-M3  
commercial grade  
Base P/NHM3  
AEC-Q101 qualified  
-
halogen-free, RoHS-compliant, and  
VF at IF = 5.0 A  
IR  
0.649 V  
4.5 μA  
- halogen-free, RoHS-compliant, and  
TJ max.  
150 °C  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified (“_X” denotes revision code  
e.g. A, B, .....)  
Package  
TO-277A (SMPC)  
Single  
Diode variations  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix  
meets JESD 201 class 2 whisker test  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS5P9  
S59  
SS5P10  
S510  
100  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (fig. 1)  
VRRM  
IF(AV)  
90  
V
A
5.0  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
A
Non-repetitive avalanche energy  
at IAS = 2.0 A, TJ = 25 °C  
EAS  
20  
mJ  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
Revision: 01-Jul-15  
Document Number: 88984  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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