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SS5P3_15 PDF预览

SS5P3_15

更新时间: 2024-11-02 01:25:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 86K
描述
High Current Density Surface Mount Schottky Barrier Rectifiers

SS5P3_15 数据手册

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SS5P3, SS5P4  
Vishay General Semiconductor  
www.vishay.com  
High Current Density Surface Mount  
Schottky Barrier Rectifiers  
FEATURES  
eSMP® Series  
Available  
• Very low profile - typical height of 1.1 mm  
• Ideal for automated placement  
• Low forward voltage drop, low power losses  
• High efficiency  
K
1
• Low thermal resistance  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
2
• AEC-Q101 qualified available  
TO-277A (SMPC)  
-Automotive ordering code: base P/NHM3  
Anode 1  
Anode 2  
K
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Cathode  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
IF(AV)  
5.0 A  
VRRM  
30 V, 40 V  
150 A  
IFSM  
EAS  
20 mJ  
MECHANICAL DATA  
VF at IF = 5.0 A  
TJ max.  
0.403 V  
150 °C  
Case: TO-277A (SMPC)  
Molding compound meets UL 94 V-0 flammability rating  
Package  
TO-277A (SMPC)  
Single  
Base P/N-M3  
commercial grade  
Base P/NHM3  
automotive grade  
-
halogen-free, RoHS-compliant, and  
Diode variations  
-
halogen-free, RoHS-compliant, and  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
automotive grade (“_X” denotes revision code e.g. A, B,.....)  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix  
meets JESD 201 class 2 whisker test  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS5P3  
S53  
SS5P4  
S54  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (fig. 1)  
VRRM  
IF(AV)  
30  
40  
V
A
5.0  
150  
20  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C  
Operating junction and storage temperature range  
EAS  
mJ  
°C  
TJ, TSTG  
-55 to +150  
Revision: 10-Dec-14  
Document Number: 88982  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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High Current Density Surface Mount Schottky Barrier Rectifiers