Datasheet > SS5P10HM3-87A

SS5P10HM3-87A

更新时间： 2024-11-05 09:06:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	97K
描述
High Current Density Surface Mount Schottky Barrier Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SS5P10HM3-87A 数据手册

New Product

SS5P9, SS5P10

Vishay General Semiconductor

www.vishay.com

High Current Density Surface Mount

Schottky Barrier Rectifiers

FEATURES

• Very low profile - typical height of 1.1 mm

eSMP^®Series

• Ideal for automated placement

• Guardring for overvoltage protection

• Low forward voltage drop, low power losses

• High efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF

maximum peak of 260 °C

TO-277A (SMPC)

• AEC-Q101 qualified

Anode 1

Anode 2

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Cathode

• Halogen-free according to IEC 61249-2-21 definition

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

5.0 A

V_RRM

90 V, 100 V

150 A

I_FSM

Base P/N-M3

- halogen-free, RoHS compliant, and

V_Fat I_F= 5.0 A

I_R

0.649 V

4.5 μA

commercial grade

Base P/NHM3 - halogen-free, RoHS compliant, and

automotive grade

T_Jmax.

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode power

supplies, freewheeling diodes, DC/DC converters and

polarity protection application.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS5P9

S59

SS5P10

S510

100

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

V_RRM

I_F(AV)

5.0

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

150

Non-repetitive avalanche energy

at I_AS= 2.0 A, T_J= 25 °C

E_AS

°C

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

Revision: 28-Jun-11

Document Number: 88984

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与SS5P10HM3-87A相关器件

型号	品牌	获取价格	描述	数据表
SS5P10-M3/86A	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS5P10-M3/87A	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS5P10-M3-86A	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS5P10-M3-87A	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS5P3	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS5P3_08	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS5P3_11	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS5P3_15	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS5P3-E3/86A	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 5A, 30V V(RRM),
SS5P3-E3/87A	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 30V V(RRM), Silicon, TO-277A, GREEN, PL

与SS5P10HM3-87A相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

SS5P10HM3-87A

SS5P10HM3-87A 数据手册

与SS5P10HM3-87A相关器件

与SS5P10HM3-87A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SS5P10HM3-87A

SS5P10HM3-87A 数据手册

与SS5P10HM3-87A相关器件

与SS5P10HM3-87A相关文章

您还可以找

您在本页遇到什么问题？