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SS5P3

更新时间: 2024-11-01 03:31:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 106K
描述
High Current Density Surface Mount Schottky Barrier Rectifiers

SS5P3 数据手册

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New Product  
SS5P3 & SS5P4  
Vishay General Semiconductor  
High Current Density Surface Mount  
Schottky Barrier Rectifiers  
FEATURES  
• Very low profile - typical height of 1.1 mm  
eSMPTM Series  
• Ideal for automated placement  
• Low forward voltage drop, low power losses  
• High efficiency  
K
1
• Low thermal resistance  
2
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
TO-277A (SMPC)  
Anode 1  
Anode 2  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Cathode  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, dc-to-dc converters and polarity  
protection applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
5 A  
MECHANICAL DATA  
Case: TO-277A (SMPC)  
VRRM  
IFSM  
30 V, 40 V  
150 A  
Epoxy meets UL 94V-0 flammability rating  
EAS  
20 mJ  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
VF at IF = 5.0 A  
TJ max.  
0.403 V  
150 °C  
E3 suffix for commercial grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
SS5P3  
S53  
SS5P4  
S54  
UNIT  
Device marking code  
VRRM  
IF(AV)  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (Fig. 1)  
30  
40  
V
A
5.0  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
A
Non-repetitive avalanche energy  
at IAS = 2 A, TJ = 25 °C  
EAS  
20  
mJ  
°C  
TJ, TSTG  
Operating junction and storage temperature range  
- 55 to + 150  
Document Number: 88982  
Revision: 22-Nov-07  
www.vishay.com  
1

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