SS32-C THRU SS320-C
3.0A Surface Mount Schottky Barrier
Rectifiers - 20V-200V
Package outline
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
SMC/DO-214AB
For surface mounted applications
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
0.245(6.22)
0.220(5.59)
0.126 (3.20)
0.114 (2.90)
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.280(7.11)
0.260(6.60)
Compliant to RoHS Directive 2011/65/EU
0.012(0.305)
0.006(0.152)
0.103(2.62)
0.079(2.06)
Mechanical data
Case: JEDEC DO-214AB molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
Polarity: Color band denotes cathode end
Mounting Position: Any
0.320(8.13)
0.305(7.75)
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)
Symbol
TYP.
MIN.
MAX.
PARAMETER
CONDITIONS
UNIT
A
IO
Forward rectified current
See Fig.
3.0
IFSM
Forward surge current
Reverse current
A
80
8.3ms single half sine-wave (JEDEC methode)
20V - 60V
80V - 200V
20V - 60V
80V - 200V
IR
mA
IR
Reverse current
mA
Junction to ambient
NOTE 1
RθJA
55
OC/W
Thermal resistance
CJ
pF
OC
Diode junction capacitance
Storage temperature
500
f=1MHz and applied 4V DC reverse voltage
+150
-65
TSTG
Note:
1.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
Operating
temperature
TJ, (OC)
*1
*3
*4
*2
VRMS
VR
VF
SYMBOLS
VRRM
(V)
(V)
(V)
(V)
*1 Repetitive peak reverse voltage
*2 RMS voltage
20
30
40
50
14
21
SS32-C
SS33-C
SS34-C
20
30
40
50
60
0.55
28
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=3.0A
35
SS35-C
SS36-C
SS38-C
SS310-C
0.70
0.85
0.92
60
80
42
-55 to +150
56
80
100
150
200
100
150
200
70
105
SS315-C
SS320-C
140
http://www.anbonsemi.com
TEL:+86-755-23776891
FAX:+86-755-81482182
Document ID
AS-3060017
Issued Date
2003/03/08
Revised Date
Revision
Page.
2023/06/30
G
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