Datasheet > SS34F

SS34F

更新时间： 2024-11-26 18:04:47

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描述
Schottky Diodes

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中文翻译

获取价格

数据手册

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SS34F 数据手册

SMD Type

Diodes

Transistors

Schottky Barrier Rectifier

SS32F ~ SS320F

SMAF

Ƶ Features

ƽ Metal silicon junction, majority carrier conduction

ƽ For surface mounted applications

ƽ Low power loss, high efficiency

ƽ High forward surge current capability

Top View

ƽ For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

Simplified outline SMAF and symbol

PIN DESCRIPTION

DESCRIPTION

Cathode

Anode

Ƶ Absolute Maximum Ratings Ta = 25ć unless otherwise specified

Parameter

Symbol

Unit

32F 34F 34AF 36F 38F 310F 312F 315F 320F

Repetitive Peak Reverse Voltage

Surge Peak Reverse Voltage

Maximum DC Blocking Voltage

V_RRM

V_RSM

V_DC

31.5

0.7

100 120 150 200

70 84 105 140

100 120 150 200

0.85 0.95

V_F

I_O

0.55

Instantaneous Forward Voltage at 3A

Averaged Forward Current

Peak forward surge current

I_FSM

0.5

0.3

T_A=25ć

Maximum DC Reverse Current

at rated DC blocking voltage

Typical Junction Capacitance

Typical thermal resistance

Junction Temperature

I_R

T_A=100ć

C_j

R_thJA

T_j

250

180

ć/W

150

Storage Temperature

T_stg

-55 to 150

* 1 Measured at 1MHz and applied reverse voltage of 4V D.C

* 2 P.C.B. mounted with 2ą× 2ą(5×5 cm) copper pad areas.

Ƶ Marking

NO.

SS32F

SS32

SS34F SS34AF

SS34 SS34A

SS36F

SS36

SS38F

SS38

SS310F SS312F SS315F

SS310 SS312 SS315

SS320F

SS320

Marking

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中文翻译

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