SS32 thru SS36
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
DO-214AB (SMC)
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity
protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
IFSM
20 V to 60 V
100 A
MECHANICAL DATA
Case: DO-214AB (SMC)
EAS
20 mJ
Epoxy meets UL 94V-0 flammability rating
VF
0.5 V, 0.75 V
125 °C, 150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
TJ max.
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
SS32
SS33
S3
SS34
S4
SS35
S5
SS36
S6
UNIT
Device marking code
S2
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
20
30
40
50
60
V
V
V
A
14
21
28
35
42
Maximum DC blocking voltage
Maximum average forward rectified current at TL (Fig. 1)
20
30
40
50
60
IF(AV)
3.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Non-repetitive avalanche energy at TA = 25 °C,
EAS
20
mJ
I
AS = 2.0 A, L = 10 mH
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
dv/dt
TJ
10 000
V/µs
°C
- 55 to + 125
- 55 to + 150
TSTG
- 55 to + 150
°C
Document Number: 88751
Revision: 23-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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