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SS34-E3-57T PDF预览

SS34-E3-57T

更新时间: 2024-11-25 09:06:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 375K
描述
Surface Mount Schottky Barrier Rectifier

SS34-E3-57T 数据手册

 浏览型号SS34-E3-57T的Datasheet PDF文件第2页浏览型号SS34-E3-57T的Datasheet PDF文件第3页浏览型号SS34-E3-57T的Datasheet PDF文件第4页 
SS32 thru SS36  
Vishay General Semiconductor  
Surface Mount Schottky Barrier Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
• High surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
DO-214AB (SMC)  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, dc-to-dc converters, and polarity  
protection applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
3.0 A  
VRRM  
IFSM  
20 V to 60 V  
100 A  
MECHANICAL DATA  
Case: DO-214AB (SMC)  
EAS  
20 mJ  
Epoxy meets UL 94V-0 flammability rating  
VF  
0.5 V, 0.75 V  
125 °C, 150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
TJ max.  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
SS32  
SS33  
S3  
SS34  
S4  
SS35  
S5  
SS36  
S6  
UNIT  
Device marking code  
S2  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
20  
30  
40  
50  
60  
V
V
V
A
14  
21  
28  
35  
42  
Maximum DC blocking voltage  
Maximum average forward rectified current at TL (Fig. 1)  
20  
30  
40  
50  
60  
IF(AV)  
3.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
100  
A
Non-repetitive avalanche energy at TA = 25 °C,  
EAS  
20  
mJ  
I
AS = 2.0 A, L = 10 mH  
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dv/dt  
TJ  
10 000  
V/µs  
°C  
- 55 to + 125  
- 55 to + 150  
TSTG  
- 55 to + 150  
°C  
Document Number: 88751  
Revision: 23-Jan-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

SS34-E3-57T 替代型号

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