Datasheet > SS12

SS12

更新时间： 2024-09-18 12:57:07

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	303K
描述
1A Patch Schottky diode 20V SMA series

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中文翻译

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数据手册

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SS12 数据手册

SS12 - SS110

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE: 20 - 100V

CURRENT: 1.0 A

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

For Use in Low Voltage Application

Guard Ring Die Construction

Plastic Case Material has UL Flammability

Classification Rating 94V-O

SMA(DO-214AC)

Dim

MinMax

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Mechanical Data

2.29

4.00

1.27

0.15

4.80

0.10

0.76

2.01

2.92

4.60

1.63

0.31

5.59

0.20

1.52

2.62

Case: SMA/DO-214AC, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

SS18 SS110

Characteristic

SS12 SS13 SS14 SS15 SS16

Unit

Symbol

100

VRRM

VRMS

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

Maximum DC blocking voltage

Maximum average forward rectified current

at TL(see fig.1)

VDC

I(AV)

1.0

Peak forward surge current

IFSM

40.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

0.45

0.55

0.70

0.85

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

0.5

TA=100 C

6.0

5.0

°C/W

°C

Typical junction capacitance (NOTE 1)

110

Typical thermal resistance (NOTE 2)

Operating junction temperature range

88.0

-65 to +150

-65 to +125

TJ,

Storage temperature range

°C

TSTG

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

1 of 2

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