Datasheet > SQM100N04-2m7

SQM100N04-2m7

更新时间： 2024-11-10 14:53:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	186K
描述
Automotive N-Channel 40 V (D-S) 175 °C MOSFET

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数据手册

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SQM100N04-2m7 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.69
Base Number Matches：	1

SQM100N04-2m7 数据手册

SQM100N04-2m7

www.vishay.com

Vishay Siliconix

Automotive N-Channel 40 V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

• TrenchFET^®power MOSFET

• Package with low thermal resistance

• 100 % R_gand UIS tested

V_DS(V)

_DS(on)(Ω) at V_GS= 10 V

_D(A)

0.0027

100

• AEC-Q101 qualified ^d

Configuration

Package

Single

TO-263

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

TO-263

N-Channel MOSFET

Top View

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C ^a

_C= 125 °C

100

Continuous Drain Current

I_D

Continuous Source Current (Diode Conduction) ^a

Pulsed Drain Current ^b

I_S

100

I_DM

I_AS

400

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

E_AS

245

157

Maximum Power Dissipation ^b

P_D

_C= 125 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-Ambient

PCB Mount ^c

°C/W

Junction-to-Case (Drain)

R_thJC

0.95

Notes

a. Package limited.

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

c. When mounted on 1" square PCB (FR4 material).

d. Parametric verification ongoing.

S15-1874-Rev. B, 10-Aug-15

Document Number: 62769

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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