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SQM100P10-19L_GE3 PDF预览

SQM100P10-19L_GE3

更新时间: 2024-11-24 22:57:43
品牌 Logo 应用领域
威世 - VISHAY 脉冲晶体管
页数 文件大小 规格书
9页 191K
描述
MOSFET P-CH 100V 93A TO263

SQM100P10-19L_GE3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:unknown
Factory Lead Time:10 weeks风险等级:1.65
Samacsys Description:MOSFET雪崩能效等级(Eas):245 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):93 A最大漏源导通电阻:0.019 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):200 A
参考标准:AEC-Q101表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

SQM100P10-19L_GE3 数据手册

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SQM100P10-19L  
www.vishay.com  
Vishay Siliconix  
Automotive P-Channel 100 V (D-S) 175 °C MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• TrenchFET® power MOSFET  
• Package with low thermal resistance  
• 100 % Rg and UIS tested  
-100  
0.0190  
0.0222  
-93  
R
DS(on) (Ω) at VGS = -10 V  
DS(on) (Ω) at VGS = -4.5 V  
R
• AEC-Q101 qualified d  
ID (A)  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
Configuration  
Package  
Single  
TO-263  
S
TO-263  
G
S
P-Channel MOSFET  
D
G
D
Top View  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
-100  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
T
C = 25 °C  
-93  
Continuous Drain Current  
ID  
TC = 125 °C  
-53  
Continuous Source Current (Diode Conduction) a  
Pulsed Drain Current b  
IS  
-120  
-200  
-70  
A
IDM  
IAS  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
L = 0.1 mH  
EAS  
245  
mJ  
W
TC = 25 °C  
375  
Maximum Power Dissipation b  
PD  
TC = 125 °C  
125  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
-55 to +175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
40  
UNIT  
Junction-to-Ambient  
PCB Mount c  
°C/W  
Junction-to-Case (Drain)  
RthJC  
0.4  
Notes  
a. Package limited.  
b. Pulse test; pulse width 300 μs, duty cycle 2 %.  
c. When mounted on 1" square PCB (FR4 material).  
d. Parametric verification ongoing.  
S15-2155-Rev. A, 14-Sep-15  
Document Number: 75583  
1
For technical questions, contact: automostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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