Datasheet > SQM100P10-19L

SQM100P10-19L

更新时间： 2024-11-10 14:54:23

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威世 - VISHAY		/
页数	文件大小	规格书
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描述
Automotive P-Channel 100 V (D-S) 175 °C MOSFET

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数据手册

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SQM100P10-19L 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.7
Base Number Matches：	1

SQM100P10-19L 数据手册

SQM100P10-19L

www.vishay.com

Vishay Siliconix

Automotive P-Channel 100 V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• TrenchFET^®power MOSFET

• Package with low thermal resistance

• 100 % R_gand UIS tested

-100

0.0190

0.0222

-93

_DS(on)(Ω) at V_GS= -10 V

_DS(on)(Ω) at V_GS= -4.5 V

• AEC-Q101 qualified ^d

I_D(A)

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Configuration

Package

Single

TO-263

P-Channel MOSFET

Top View

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-100

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

-93

Continuous Drain Current

I_D

T_C= 125 °C

-53

Continuous Source Current (Diode Conduction) ^a

Pulsed Drain Current ^b

I_S

-120

-200

-70

I_DM

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

E_AS

245

T_C= 25 °C

375

Maximum Power Dissipation ^b

P_D

T_C= 125 °C

125

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-Ambient

PCB Mount ^c

°C/W

Junction-to-Case (Drain)

R_thJC

0.4

Notes

a. Package limited.

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

c. When mounted on 1" square PCB (FR4 material).

d. Parametric verification ongoing.

S15-2155-Rev. A, 14-Sep-15

Document Number: 75583

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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