Datasheet > SQM10250E

SQM10250E

更新时间： 2024-11-10 14:55:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	217K
描述
Automotive N-Channel 250 V (D-S) 175 °C MOSFET

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技术参数
数据手册

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SQM10250E 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

SQM10250E 数据手册

SQM10250E

Vishay Siliconix

www.vishay.com

Automotive N-Channel 250 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®power MOSFET

TO-263

• Package with low thermal resistance

• AEC-Q101 qualified

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

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PRODUCT SUMMARY

V_DS(V)

250

0.0300

0.0320

_DS(on)() at V_GS= 10 V

_DS(on)() at V_GS= 7.5 V

N-Channel MOSFET

I_D(A)

Configuration

Package

Single

TO-263

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

250

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

Continuous drain current

I_D

_C= 125 °C

Continuous source current (diode conduction) ^a

Pulsed drain current ^b

I_S

120

I_DM

I_AS

180

Single pulse avalanche current

Single pulse avalanche energy

L = 0.1 mH

E_AS

T_C= 25 °C

375

Maximum power dissipation ^b

P_D

T_C= 125 °C

125

Operating junction and storage temperature range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-ambient

PCB mount ^c

°C/W

Junction-to-case (drain)

R_thJC

0.4

Notes

a. Package limited

b. Pulse test; pulse width  300 μs, duty cycle  2 %

c. When mounted on 1" square PCB (FR4 material)

S18-0341-Rev. A, 26-Mar-18

Document Number: 75035

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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