Datasheet > SQM100N10-10

SQM100N10-10

更新时间： 2024-11-24 19:47:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	169K
描述
TRANSISTOR POWER, FET, FET General Purpose Power

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SQM100N10-10 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

SQM100N10-10 数据手册

SQM100N10-10

Vishay Siliconix

Automotive

N-Channel 100 V (D-S) 175 °C MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET^®Power MOSFET

• Package with Low Thermal Resistance

• AEC-Q101 Qualified^d

PRODUCT SUMMARY

V_DS(V)

100

0.0105

0.012

100

_DS(on)() at V_GS= 10 V

R_DS(on)() at V_GS= 4.5 V

I_D(A)

Configuration

Single

• Compliant to RoHS Directive 2002/95/EC

• Find out more about Vishay’s Automotive Grade Product

Requirements at: www.vishay.com/applications

TO-263

D S

Top View

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-263

SQM100N10-10-GE3

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

100

V_GS

100

T_C= 25 °C^a

_C= 125 °C

Continuous Drain Current

I_D

Continuous Source Current (Diode Conduction)^a

Pulsed Drain Current^b

I_S

100

I_DM

I_AS

E_AS

400

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

280

375

Maximum Power Dissipation^b

P_D

_C= 125 °C

125

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-Ambient

PCB Mount^c

°C/W

Junction-to-Case (Drain)

R_thJC

0.4

Notes

a. Package limited.

b. Pulse test; pulse width  300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

Document Number: 67027

S10-2043-Rev. A, 20-Sep-10

www.vishay.com

12 3 4 5 6 7...9

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