Datasheet > SPP24N60C3_09

SPP24N60C3_09

更新时间： 2024-11-23 06:13:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
11页	346K
描述
Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

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中文翻译

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SPP24N60C3_09 数据手册

SPP24N60C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

@ T

650

0.16

24.3

Ω

jmax

DS(on)

• Worldwide best R

in TO 220

DS(on)

PG-TO220-3-1

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

Type

SPP24N60C3

Package

PG-TO220-3-1 Q67040-S4639

Ordering Code

Marking

24N60C3

Maximum Ratings

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

24.3

15.4

72.9

780

T = 100 °C

Pulsed drain current, t limited by T

Avalanche energy, single pulse

D puls

jmax

I = 10 A, V = 50 V

jmax

Avalanche energy, repetitive t limited by T

I = 24.3 A, V = 50 V

24.3

Avalanche current, repetitive t limited by T

Gate source voltage static

jmax AR

±20

240

Gate source voltage AC (f >1Hz)

tot

Power dissipation, T = 25°C

°C

V/ns

Operating and storage temperature

Reverse diode dv/dt

T , T

dv/dt

-55... +150

stg

Page 1

Rev. 2.5

2009-12-01

12 3 4 5 6 7...11

中文翻译

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