5秒后页面跳转
SPP24N60C3HKSA1 PDF预览

SPP24N60C3HKSA1

更新时间: 2024-11-23 20:03:59
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 345K
描述
Power Field-Effect Transistor, 24.3A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN

SPP24N60C3HKSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.65
其他特性:AVALANCHE RATED雪崩能效等级(Eas):780 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):24.3 A最大漏源导通电阻:0.16 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):72.9 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SPP24N60C3HKSA1 数据手册

 浏览型号SPP24N60C3HKSA1的Datasheet PDF文件第2页浏览型号SPP24N60C3HKSA1的Datasheet PDF文件第3页浏览型号SPP24N60C3HKSA1的Datasheet PDF文件第4页浏览型号SPP24N60C3HKSA1的Datasheet PDF文件第5页浏览型号SPP24N60C3HKSA1的Datasheet PDF文件第6页浏览型号SPP24N60C3HKSA1的Datasheet PDF文件第7页 
SPP24N60C3  
Cool MOS™ Power Transistor  
Feature  
New revolutionary high voltage technology  
V
@ T  
650  
0.16  
24.3  
V
A
DS  
jmax  
R
DS(on)  
I
D
Worldwide best R  
in TO 220  
DS(on)  
PG-TO220-3-1  
Ultra low gate charge  
Periodic avalanche rated  
Extreme dv/dt rated  
Ultra low effective capacitances  
Improved transconductance  
Type  
SPP24N60C3  
Package  
PG-TO220-3-1 Q67040-S4639  
Ordering Code  
Marking  
24N60C3  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T = 25 °C  
24.3  
15.4  
72.9  
780  
C
T = 100 °C  
C
Pulsed drain current, t limited by T  
Avalanche energy, single pulse  
I
D puls  
p
jmax  
mJ  
E
AS  
I = 10 A, V = 50 V  
D
DD  
1)  
jmax  
E
1
Avalanche energy, repetitive t limited by T  
AR  
AR  
I = 24.3 A, V = 50 V  
D
DD  
24.3  
A
V
Avalanche current, repetitive t limited by T  
Gate source voltage static  
I
V
AR  
jmax AR  
±20  
30  
240  
GS  
V
P
Gate source voltage AC (f >1Hz)  
GS  
tot  
Power dissipation, T = 25°C  
W
C
°C  
V/ns  
Operating and storage temperature  
Reverse diode dv/dt  
T , T  
dv/dt  
-55... +150  
j
stg  
4)  
15  
Page 1  
Rev. 2.5  
2009-12-01  

与SPP24N60C3HKSA1相关器件

型号 品牌 获取价格 描述 数据表
SPP24N60CFD INFINEON

获取价格

CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability
SPP24N60CFD_09 INFINEON

获取价格

CoolMOS Power Transistor
SPP24N60CFDHKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 21.7A I(D), 600V, 0.185ohm, 1-Element, N-Channel, Silicon,
SPP2UL33R0JLF TTELEC

获取价格

Fibre Core Conformal Coated Wirewound Resistor
SPP2UL4700JLF TTELEC

获取价格

Fibre Core Conformal Coated Wirewound Resistor
SPP2UL4700KLF TTELEC

获取价格

Fibre Core Conformal Coated Wirewound Resistor
SPP2UL6R80JLF TTELEC

获取价格

Fibre Core Conformal Coated Wirewound Resistor
SPP3 TTELEC

获取价格

Fibre core conformal coated wirewound resistor
SPP-3 TTELEC

获取价格

General Purpose Wirewound Resistors
SPP3052 SYNC-POWER

获取价格

P-Channel Enhancement Mode MOSFET