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SPP24N60C3HKSA1 PDF预览

SPP24N60C3HKSA1

更新时间: 2024-11-06 20:03:59
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 345K
描述
Power Field-Effect Transistor, 24.3A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN

SPP24N60C3HKSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.65
其他特性:AVALANCHE RATED雪崩能效等级(Eas):780 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):24.3 A最大漏源导通电阻:0.16 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):72.9 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SPP24N60C3HKSA1 数据手册

 浏览型号SPP24N60C3HKSA1的Datasheet PDF文件第2页浏览型号SPP24N60C3HKSA1的Datasheet PDF文件第3页浏览型号SPP24N60C3HKSA1的Datasheet PDF文件第4页浏览型号SPP24N60C3HKSA1的Datasheet PDF文件第5页浏览型号SPP24N60C3HKSA1的Datasheet PDF文件第6页浏览型号SPP24N60C3HKSA1的Datasheet PDF文件第7页 
SPP24N60C3  
Cool MOS™ Power Transistor  
Feature  
New revolutionary high voltage technology  
V
@ T  
650  
0.16  
24.3  
V
A
DS  
jmax  
R
DS(on)  
I
D
Worldwide best R  
in TO 220  
DS(on)  
PG-TO220-3-1  
Ultra low gate charge  
Periodic avalanche rated  
Extreme dv/dt rated  
Ultra low effective capacitances  
Improved transconductance  
Type  
SPP24N60C3  
Package  
PG-TO220-3-1 Q67040-S4639  
Ordering Code  
Marking  
24N60C3  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T = 25 °C  
24.3  
15.4  
72.9  
780  
C
T = 100 °C  
C
Pulsed drain current, t limited by T  
Avalanche energy, single pulse  
I
D puls  
p
jmax  
mJ  
E
AS  
I = 10 A, V = 50 V  
D
DD  
1)  
jmax  
E
1
Avalanche energy, repetitive t limited by T  
AR  
AR  
I = 24.3 A, V = 50 V  
D
DD  
24.3  
A
V
Avalanche current, repetitive t limited by T  
Gate source voltage static  
I
V
AR  
jmax AR  
±20  
30  
240  
GS  
V
P
Gate source voltage AC (f >1Hz)  
GS  
tot  
Power dissipation, T = 25°C  
W
C
°C  
V/ns  
Operating and storage temperature  
Reverse diode dv/dt  
T , T  
dv/dt  
-55... +150  
j
stg  
4)  
15  
Page 1  
Rev. 2.5  
2009-12-01  

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