生命周期: | Obsolete | 零件包装代码: | TO-263 |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.67 | Is Samacsys: | N |
其他特性: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 雪崩能效等级(Eas): | 810 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (Abs) (ID): | 100 A | 最大漏极电流 (ID): | 100 A |
最大漏源导通电阻: | 0.0041 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 300 W | 最大脉冲漏极电流 (IDM): | 400 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SPB100N06S2-05 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
SPB100N06S2L-05 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
SPB100N06S2L05DTMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100A I(D), 55V, 0.0056ohm, 1-Element, N-Channel, Silicon, M | |
SPB100N08S2-07 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
SPB100N08S2-07-E6327 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100A I(D), 75V, 0.0068ohm, 1-Element, N-Channel, Silicon, M | |
SPB100N08S2L-07 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
SPB100UFA | VMI |
获取价格 |
5,000 V - 20,000 V Single Phase Bridge 2.0 A Forward Current 70 ns Recovery Time | |
SPB100UFB | VMI |
获取价格 |
5,000 V - 20,000 V Single Phase Bridge 2.0 A Forward Current 70 ns Recovery Time | |
SPB101 | NIDEC |
获取价格 |
Detect Switches | |
SPB10100 | MICROSEMI |
获取价格 |
2 X 100A SCHOTTKY BARRIER RECTIFIER |