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SPB100N08S2L-07 PDF预览

SPB100N08S2L-07

更新时间: 2024-09-28 22:21:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 312K
描述
OptiMOS Power-Transistor

SPB100N08S2L-07 技术参数

生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84其他特性:AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):810 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:75 V
最大漏极电流 (Abs) (ID):100 A最大漏极电流 (ID):100 A
最大漏源导通电阻:0.0084 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
最大脉冲漏极电流 (IDM):400 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SPB100N08S2L-07 数据手册

 浏览型号SPB100N08S2L-07的Datasheet PDF文件第2页浏览型号SPB100N08S2L-07的Datasheet PDF文件第3页浏览型号SPB100N08S2L-07的Datasheet PDF文件第4页浏览型号SPB100N08S2L-07的Datasheet PDF文件第5页浏览型号SPB100N08S2L-07的Datasheet PDF文件第6页浏览型号SPB100N08S2L-07的Datasheet PDF文件第7页 
SPP100N08S2L-07  
SPB100N08S2L-07  
OptiMOS Power-Transistor  
Product Summary  
Feature  
V
75  
6.5  
V
DS  
N-Channel  
R
max. SMD version  
mΩ  
A
DS(on)  
Enhancement mode  
Logic Level  
I
100  
D
P- TO263 -3-2  
P- TO220 -3-1  
175°C operating temperature  
Avalanche rated  
dv/dt rated  
Type  
Package  
Ordering Code  
Marking  
PN08L07  
PN08L07  
SPP100N08S2L-07 P- TO220 -3-1 Q67060-S6045  
SPB100N08S2L-07 P- TO263 -3-2 Q67060-S6047  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
1)  
A
Continuous drain current  
I
D
T =25°C  
100  
100  
400  
C
Pulsed drain current  
I
D puls  
T =25°C  
C
810  
mJ  
Avalanche energy, single pulse  
E
AS  
I =80A, V =25V, R =25Ω  
D
DD  
GS  
2)  
E
30  
6
Repetitive avalanche energy, limited by T  
Reverse diode dv/dt  
AR  
jmax  
dv/dt  
kV/µs  
I =100A, V =60V, di/dt=200A/µs, T =175°C  
jmax  
S
DS  
Gate source voltage  
Power dissipation  
V
V
±20  
300  
GS  
P
W
tot  
T =25°C  
C
°C  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T , T  
-55... +175  
55/175/56  
j
stg  
Page 1  
2003-05-09  

SPB100N08S2L-07 替代型号

型号 品牌 替代类型 描述 数据表
SPB100N08S2-07 INFINEON

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OptiMOS Power-Transistor
IPB100N08S2L-07 INFINEON

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IPB100N08S2-07 INFINEON

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