SN75LBC241
LOW-POWER LinBiCMOS MULTIPLE DRIVERS AND RECEIVERS
SLLS137E – MAY 1992 – REVISED JANUARY 1999
DB OR DW PACKAGE
Operates With Single 5-V Power Supply
(TOP VIEW)
Meets or Exceeds the Requirements of
TIA/EIA-232-F and ITU Recommendation
V.28
TOUT3
TOUT1
TOUT2
RIN2
TOUT4
RIN3
1
28
27
26
25
24
23
2
Improved Performance Replacement for
MAX241
ROUT3
SHUTDOWN
EN
3
4
Operates at Data Rates up to 100 kbit/s
Over a 3-m Cable
ROUT2
TIN2
5
RIN4
6
Low-Power Shutdown Mode . . . ≤1 µA Typ
LinBiCMOS Process Technology
Four Drivers and Five Receivers
±30-V Input Levels
TIN1
7
22 ROUT4
21 TIN4
20 TIN3
ROUT1
RIN1
8
9
10
11
12
13
14
19
18
17
16
15
GND
ROUT5
RIN5
V
CC
3-State TTL/CMOS Receiver Outputs
±9-V Output Swing With a 5-V Supply
C1+
V
SS
V
C2–
C2+
DD
C1–
Applications
– TIA/EIA-232-F Interface
– Battery-Powered Systems
– Terminals
– Modems
– Computers
Package Options Include Plastic
Small-Outline (DW) and Shrink
Small-Outline (DB) Packages
description
†
The SN75LBC241 is a low-power LinBiCMOS line-interface device containing four independent drivers and
five receivers. It is designed as a plug-in replacement for the Maxim MAX241. The SN75LBC241 provides a
capacitive-charge-pump voltage generator to produce RS-232 voltage levels from a 5-V supply. The
charge-pump oscillator frequency is 20 kHz. Each receiver converts RS-232 inputs to 5-V TTL/CMOS levels.
The receivers have a typical threshold of 1.2 V and a typical hysteresis of 0.5 V and can accept ±30-V inputs.
Each driver converts TTL/CMOS input levels into RS-232 levels.
The SN75LBC241 includes a receiver, a 3-state control line, and a low-power shutdown control line. When the
EN line is high, receiver outputs are placed in the high-impedance state. When EN is low, normal operation is
enabled.
The shutdown mode reduces power dissipation to less than 5 µW typically. In this mode, receiver outputs have
high impedance, driver outputs are turned off, and the charge-pump circuit is turned off. When SHUTDOWN
is high, the shutdown mode is enabled. When SHUTDOWN is low, normal operation is enabled.
This device has been designed to conform to TIA/EIA-232-F and ITU Recommendation V.28.
The SN75LBC241 has been designed using LinBiCMOS technology and cells contained in the Texas
Instruments LinASIC library. Use of LinBiCMOS circuitry increases latch-up immunity in this device over an
all-CMOS design.
The SN75LBC241 is characterized for operation from 0°C to 70°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
†
Patent pending
LinBiCMOS and LinASIC are trademarks of Texas Instruments Incorporated.
Copyright 1999, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
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