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SN75LBC241DWE4 PDF预览

SN75LBC241DWE4

更新时间: 2024-09-13 04:50:59
品牌 Logo 应用领域
德州仪器 - TI 线路驱动器或接收器驱动程序和接口接口集成电路光电二极管信息通信管理
页数 文件大小 规格书
10页 207K
描述
LOW-POWER LinBiCMOS MULTIPLE DRIVERS AND RECEIVERS

SN75LBC241DWE4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:GREEN, PLASTIC, SOIC-28针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.5
Is Samacsys:N其他特性:EXTERNAL CHARGE PUMP; TRISTATABLE RECEIVERS
差分输出:NO驱动器位数:4
输入特性:SCHMITT TRIGGER接口集成电路类型:LINE TRANSCEIVER
接口标准:EIA-232-F; TIA-232-F; V.28JESD-30 代码:R-PDSO-G28
JESD-609代码:e4长度:17.9 mm
湿度敏感等级:1功能数量:4
端子数量:28最高工作温度:70 °C
最低工作温度:最小输出摆幅:10 V
输出特性:3-STATE最大输出低电流:0.0032 A
输出极性:INVERTED封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP28,.4
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified最大接收延迟:500 ns
接收器位数:5座面最大高度:2.65 mm
子类别:Line Driver or Receivers最大压摆率:8 mA
最大供电电压:5.5 V最小供电电压:4.5 V
标称供电电压:5 V表面贴装:YES
技术:BICMOS温度等级:COMMERCIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大传输延迟:500 ns
宽度:7.5 mmBase Number Matches:1

SN75LBC241DWE4 数据手册

 浏览型号SN75LBC241DWE4的Datasheet PDF文件第2页浏览型号SN75LBC241DWE4的Datasheet PDF文件第3页浏览型号SN75LBC241DWE4的Datasheet PDF文件第4页浏览型号SN75LBC241DWE4的Datasheet PDF文件第5页浏览型号SN75LBC241DWE4的Datasheet PDF文件第6页浏览型号SN75LBC241DWE4的Datasheet PDF文件第7页 
SN75LBC241  
LOW-POWER LinBiCMOS MULTIPLE DRIVERS AND RECEIVERS  
SLLS137F – MAY 1992 – REVISED FEBRUARY 2001  
DW PACKAGE  
(TOP VIEW)  
Operates With Single 5-V Power Supply  
Meets or Exceeds the Requirements of  
TIA/EIA-232-F and ITU Recommendation  
V.28  
TOUT3  
TOUT1  
TOUT2  
RIN2  
TOUT4  
RIN3  
1
28  
27  
26  
25  
24  
23  
2
Improved Performance Replacement for  
MAX241  
ROUT3  
SHUTDOWN  
EN  
3
4
Operates at Data Rates up to 100 kbit/s  
Over a 3-m Cable  
ROUT2  
TIN2  
5
RIN4  
6
Low-Power Shutdown Mode . . . 1 µA Typ  
LinBiCMOS Process Technology  
Four Drivers and Five Receivers  
±30-V Input Levels  
TIN1  
7
22 ROUT4  
21 TIN4  
20 TIN3  
ROUT1  
RIN1  
8
9
10  
11  
12  
13  
14  
19  
18  
17  
16  
15  
GND  
ROUT5  
RIN5  
V
CC  
3-State TTL/CMOS Receiver Outputs  
±9-V Output Swing With a 5-V Supply  
C1+  
V
SS  
V
C2–  
C2+  
DD  
C1–  
Applications  
– TIA/EIA-232-F Interface  
– Battery-Powered Systems  
– Terminals  
– Modems  
– Computers  
Packaged in Plastic Small-Outline Package  
description  
The SN75LBC241 is a low-power LinBiCMOS line-interface device containing four independent drivers and  
five receivers. It is designed as a plug-in replacement for the Maxim MAX241. The SN75LBC241 provides a  
capacitive-charge-pump voltage generator to produce RS-232 voltage levels from a 5-V supply. The  
charge-pump oscillator frequency is 20 kHz. Each receiver converts RS-232 inputs to 5-V TTL/CMOS levels.  
The receivers have a typical threshold of 1.2 V and a typical hysteresis of 0.5 V and can accept ±30-V inputs.  
Each driver converts TTL/CMOS input levels into RS-232 levels.  
The SN75LBC241 includes a receiver, a 3-state control line, and a low-power shutdown control line. When the  
EN line is high, receiver outputs are placed in the high-impedance state. When EN is low, normal operation is  
enabled.  
The shutdown mode reduces power dissipation to less than 5 µW, typically. In this mode, receiver outputs have  
high impedance, driver outputs are turned off, and the charge-pump circuit is turned off. When SHUTDOWN  
is high, the shutdown mode is enabled. When SHUTDOWN is low, normal operation is enabled.  
This device has been designed to conform to TIA/EIA-232-F and ITU Recommendation V.28.  
The SN75LBC241 has been designed using LinBiCMOS technology and cells contained in the  
Texas Instruments LinASIC library. Use of LinBiCMOS circuitry increases latch-up immunity in this device  
over an all-CMOS design.  
The SN75LBC241 is characterized for operation from 0°C to 70°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
LinBiCMOS and LinASIC are trademarks of Texas Instruments.  
Copyright 2001, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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