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SN74AUP1G07DBVTE4 PDF预览

SN74AUP1G07DBVTE4

更新时间： 2024-11-01 21:53:51
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德州仪器 - TI 驱动器输出元件
页数 文件大小 规格书
12页 282K
描述
LOW-POWER SINGLE BUFFER/DRIVER WITH OPEN-DRAIN OUTPUTS

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SN74AUP1G07DBVTE4 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SOT-23
包装说明：LSSOP, TSOP5/6,.11,37针数：5
Reach Compliance Code：unknownHTS代码：8542.39.00.01
风险等级：5.31系列：AUP/ULP/V
JESD-30 代码：R-PDSO-G5JESD-609代码：e4
长度：2.9 mm负载电容（CL）：30 pF
逻辑集成电路类型：BUFFER最大I（ol）：0.0017 A
湿度敏感等级：1功能数量：1
输入次数：1端子数量：5
最高工作温度：85 °C最低工作温度：-40 °C
输出特性：OPEN-DRAIN封装主体材料：PLASTIC/EPOXY
封装代码：LSSOP封装等效代码：TSOP5/6,.11,37
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
包装方法：TR峰值回流温度（摄氏度）：260
电源：1.2/3.3 VProp。Delay @ Nom-Sup：21.9 ns
传播延迟（tpd）：14.7 ns认证状态：Not Qualified
施密特触发器：NO座面最大高度：1.45 mm
子类别：Gates最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：0.8 V标称供电电压 (Vsup)：1.1 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：0.95 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：1.6 mmBase Number Matches：1

SN74AUP1G07DBVTE4 数据手册

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SN74AUP1G07  
LOW-POWER SINGLE BUFFER/DRIVER  
WITH OPEN-DRAIN OUTPUTS  
www.ti.com  
SCES591A–JULY 2004–REVISED JULY 2005  
FEATURES  
•
•
•
Wide Operating VCC Range of 0.8 V to 3.6 V  
Optimized for 3.3-V Operation  
•
•
•
Available in the Texas Instruments  
NanoStar™ and NanoFree™ Packages  
3.6-V I/O Tolerant to Support Mixed-Mode  
Signal Operation  
Low Static-Power Consumption  
(ICC = 0.9 µA Max)  
•
•
•
tpd = 3.3 ns Max at 3.3 V  
Low Dynamic-Power Consumption  
(Cpd = 1 pF Typ at 3.3 V)  
Suitable for Point-to-Point Applications  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
•
•
Low Input Capacitance (Ci = 1.5 pF Typ)  
Low Noise – Overshoot and Undershoot <10%  
of VCC  
•
ESD Performance Tested Per JESD 22  
– 2000-V Human-Body Model  
(A114-B, Class II)  
•
•
Ioff Supports Partial-Power-Down Mode  
Operation  
– 200-V Machine Model (A115-A)  
Input Hysteresis Allows Slow Input Transition  
and Better Switching Noise Immunity at the  
Input (Vhys = 250 mV Typ at 3.3 V)  
– 1000-V Charged-Device Model (C101)  
•
ESD Protection Exceeds ±5000 V With  
Human-Body Model  
DBV PACKAGE  
(TOP VIEW)  
DCK PACKAGE  
(TOP VIEW)  
YEP OR YZP PACKAGE  
(BOTTOM VIEW)  
3
4
Y
GND  
A
NC  
V
Y
1
2
3
5
CC  
1
2
3
5
NC  
A
V
CC  
2
1
A
5
V
CC  
DNU  
4
GND  
DNU – Do not use  
4
Y
GND  
NC – No internal connection  
NC – No internal connection  
See mechanical drawings for dimensions.  
DESCRIPTION/ORDERING INFORMATION  
The AUP family is TI's premier solution to the industry's low power needs in battery-powered portable  
applications. This family ensures a very low static and dynamic power consumption across the entire VCC range  
of 0.8 V to 3.6 V, resulting in an increased battery life. This product also maintains excellent signal integrity (see  
Figure 1 and Figure 2).  
Static-Power Consumption  
Dynamic-Power Consumption  
(pF)  
Switching Characteristics  
†
(µA)  
at 25 MHz  
3.5  
3
100%  
80%  
100%  
80%  
2.5  
2
Input  
Output  
60%  
40%  
60%  
40%  
3.3-V  
3.3-V  
†  
Logic  
1.5  
1
†
Logic  
0.5  
0
20%  
0%  
20%  
0%  
AUP  
AUP  
−0.5  
20  
Time − ns  
10  
15  
0
5
25  
35 40 45  
30  
†
Single, dual, and triple gates  
†
AUP1G08 data at C = 15 pF  
L
Figure 1. AUP – The Lowest-Power Family  
Figure 2. Excellent Signal Integrity  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
NanoStar, NanoFree are trademarks of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2004–2005, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
 
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SN74AUP1G07DBVTE4 替代型号

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