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SN54ABT863_08

更新时间： 2024-11-12 05:18:23
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德州仪器 - TI 总线收发器输出元件
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13页 270K
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9-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

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SN54ABT863_08 数据手册

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SN54ABT863, SN74ABT863  
9-BIT BUS TRANSCEIVERS  
WITH 3-STATE OUTPUTS  
SCBS201E – FEBRUARY 1991 – REVISED JULY 1998  
SN54ABT863 . . . JT PACKAGE  
SN74ABT863 . . . DB, DW, NT, OR PW PACKAGE  
(TOP VIEW)  
State-of-the-Art EPIC-ΙΙB BiCMOS Design  
Significantly Reduces Power Dissipation  
Typical V  
(Output Ground Bounce) < 1 V  
OLP  
at V  
= 5 V, T = 25°C  
OEBA1  
A1  
V
CC  
1
2
3
4
5
6
7
8
9
24  
23  
22  
21  
CC  
A
B1  
B2  
B3  
High-Impedance State During Power Up  
and Power Down  
A2  
A3  
A4  
A5  
High-Drive Outputs (–32-mA I , 64-mA I  
)
OH  
OL  
20 B4  
Latch-Up Performance Exceeds 500 mA Per  
JESD 17  
19 B5  
A6  
18 B6  
ESD Protection Exceeds 2000 V Per  
MIL-STD-883, Method 3015; Exceeds 200 V  
Using Machine Model (C = 200 pF, R = 0)  
A7  
A8  
17 B7  
16 B8  
A9 10  
OEBA2 11  
GND 12  
15 B9  
Package Options Include Plastic  
Small-Outline (DW), Shrink Small-Outline  
(DB) Packages, and Thin Shrink  
14 OEAB2  
13 OEAB1  
Small-Outline (PW), Ceramic Chip Carriers  
(FK), Plastic (NT), and Ceramic (JT) DIPs  
SN54ABT863 . . . FK PACKAGE  
(TOP VIEW)  
description  
The ’ABT863 devices are 9-bit transceivers  
designed for asynchronous communication  
between data buses. The control-function  
implementation allows for maximum flexibility in  
timing.  
4
3
2
1
28 27 26  
25  
5
A3  
A4  
A5  
NC  
A6  
A7  
A8  
B3  
B4  
B5  
6
24  
21  
7
8
These devices allow noninverted data  
transmission from the A bus to the B bus or from  
the B bus to the A bus, depending on the logic  
levels at the output-enable (OEAB and OEBA)  
inputs.  
22 NC  
B6  
9
21  
10  
11  
20 B7  
19 B8  
12 13 14 15 16 17 18  
The outputs are in the high-impedance state  
during power up and power down. The outputs  
remain in the high-impedance state while the  
device is powered down.  
NC – No internal connection  
When V  
is between 0 and 2.1 V, the device is  
CC  
in the high-impedance state during power up or  
power down. However, to ensure the  
high-impedance state above 2.1 V, OE should be  
tied to V through a pullup resistor; the minimum  
CC  
value of the resistor is determined by the  
current-sinking capability of the driver.  
The SN54ABT863 is characterized for operation over the full military temperature range of –55°C to 125°C.  
The SN74ABT863 is characterized for operation from –40°C to 85°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
EPIC-ΙΙB is a trademark of Texas Instruments Incorporated.  
Copyright 1998, Texas Instruments Incorporated  
UNLESS OTHERWISE NOTED this document contains PRODUCTION  
DATA information current as of publication date. Products conform to  
specifications per the terms of Texas Instruments standard warranty.  
Production processing does not necessarily include testing of all  
parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...13

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