是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DFP | 包装说明: | DFP, FL20,.4 |
针数: | 20 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.02 |
风险等级: | 5.92 | Is Samacsys: | N |
访问模式: | FAST PAGE WITH EDO | 最长访问时间: | 100 ns |
其他特性: | CAS BEFORE RAS REFRESH | I/O 类型: | SEPARATE |
JESD-30 代码: | R-CDFP-F20 | 长度: | 17.015 mm |
内存密度: | 1048576 bit | 内存集成电路类型: | FAST PAGE DRAM |
内存宽度: | 1 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 20 |
字数: | 1048576 words | 字数代码: | 1000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 组织: | 1MX1 |
输出特性: | 3-STATE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | DFP | 封装等效代码: | FL20,.4 |
封装形状: | RECTANGULAR | 封装形式: | FLATPACK |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 5 V |
认证状态: | Not Qualified | 刷新周期: | 512 |
筛选级别: | 38535Q/M;38534H;883B | 座面最大高度: | 2.41 mm |
最大待机电流: | 0.003 A | 子类别: | DRAMs |
最大压摆率: | 0.07 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | MILITARY | 端子形式: | FLAT |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 9.655 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMJ4C1024-10HL | TI |
获取价格 |
1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY | |
SMJ4C1024-10HLM | TI |
获取价格 |
1MX1 FAST PAGE DRAM, 100ns, CDSO20, CERAMIC, LCC-26/20 | |
SMJ4C1024-10HLMT | TI |
获取价格 |
1MX1 FAST PAGE DRAM, 100ns, CDSO20, CERAMIC, LCC-26/20 | |
SMJ4C1024-10JD | TI |
获取价格 |
1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY | |
SMJ4C1024-10JDL | TI |
获取价格 |
IC,DRAM,FAST PAGE,1MX1,CMOS,DIP,18PIN,CERAMIC | |
SMJ4C1024-10JDM | TI |
获取价格 |
1MX1 FAST PAGE DRAM, 100ns, CDIP18, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-18 | |
SMJ4C1024-10SV | TI |
获取价格 |
1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY | |
SMJ4C1024-10SVM | TI |
获取价格 |
1MX1 FAST PAGE DRAM, 100ns, CDIP20, CERAMIC, DIP-20 | |
SMJ4C1024-12FQ | TI |
获取价格 |
1048576 BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY | |
SMJ4C1024-12FQM | TI |
获取价格 |
1MX1 FAST PAGE DRAM, 120ns, CDSO20 |