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SMJ4464-12FVS PDF预览

SMJ4464-12FVS

更新时间: 2024-11-25 19:21:31
品牌 Logo 应用领域
德州仪器 - TI 动态存储器内存集成电路
页数 文件大小 规格书
19页 510K
描述
64KX4 PAGE MODE DRAM, 120ns, CQCC18, CERAMIC, LCC-18

SMJ4464-12FVS 技术参数

生命周期:Obsolete零件包装代码:LCC
包装说明:CERAMIC, LCC-18针数:18
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.7
访问模式:PAGE最长访问时间:120 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHJESD-30 代码:R-CQCC-N18
长度:12.32 mm内存密度:262144 bit
内存集成电路类型:PAGE MODE DRAM内存宽度:4
功能数量:1端口数量:1
端子数量:18字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:110 °C最低工作温度:-55 °C
组织:64KX4输出特性:3-STATE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:QCCN
封装形状:RECTANGULAR封装形式:CHIP CARRIER
认证状态:Not Qualified刷新周期:256
座面最大高度:2.18 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:NMOS
温度等级:OTHER端子形式:NO LEAD
端子节距:1.27 mm端子位置:QUAD
宽度:7.24 mmBase Number Matches:1

SMJ4464-12FVS 数据手册

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与SMJ4464-12FVS相关器件

型号 品牌 获取价格 描述 数据表
SMJ4464-12JDL ROCHESTER

获取价格

Page Mode DRAM, 64KX4, 120ns, NMOS, CDIP18, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, CERA
SMJ4464-12JDS TI

获取价格

64KX4 PAGE MODE DRAM, 120ns, CDIP18, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DI
SMJ4464-12JDS ROCHESTER

获取价格

Page Mode DRAM, 64KX4, 120ns, NMOS, CDIP18, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, CERA
SMJ4464-15FVL TI

获取价格

64KX4 PAGE MODE DRAM, 150ns, CQCC18, CERAMIC, LCC-18
SMJ4464-15FVS TI

获取价格

64KX4 PAGE MODE DRAM, 150ns, CQCC18, CERAMIC, LCC-18
SMJ4464-15JDL TI

获取价格

64KX4 PAGE MODE DRAM, 150ns, CDIP18, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DI
SMJ4464-15JDL ROCHESTER

获取价格

Page Mode DRAM, 64KX4, 150ns, NMOS, CDIP18, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, CERA
SMJ4464-15JDS ROCHESTER

获取价格

Page Mode DRAM, 64KX4, 150ns, NMOS, CDIP18, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, CERA
SMJ4464-15JDS TI

获取价格

64KX4 PAGE MODE DRAM, 150ns, CDIP18, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DI
SMJ4464-20FVL TI

获取价格

64KX4 PAGE MODE DRAM, 200ns, CQCC18, CERAMIC, LCC-18