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SMJ44C251B-10HJM883C PDF预览

SMJ44C251B-10HJM883C

更新时间： 2023-01-02 19:15:36
品牌 Logo 应用领域
MICROSS 动态存储器
页数 文件大小 规格书
57页 1254K
描述
Video DRAM, 256KX4, 100ns, CMOS, CDSO28, CERAMIC, LCC-28

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SMJ44C251B-10HJM883C 数据手册

 浏览型号SMJ44C251B-10HJM883C的Datasheet PDF文件第2页浏览型号SMJ44C251B-10HJM883C的Datasheet PDF文件第3页浏览型号SMJ44C251B-10HJM883C的Datasheet PDF文件第4页浏览型号SMJ44C251B-10HJM883C的Datasheet PDF文件第5页浏览型号SMJ44C251B-10HJM883C的Datasheet PDF文件第6页浏览型号SMJ44C251B-10HJM883C的Datasheet PDF文件第7页 
VRAM  
SMJ44C251B  
MT42C4256  
Austin Semiconductor, Inc.  
256K X 4 VRAM  
PIN ASSIGNMENT  
(Top View)  
256K x 4 DRAM  
with 512K x 4 SAM  
AVAILABLE AS MILITARY  
SPECIFICATIONS  
• SMD 5962-89497  
• MIL-STD-883  
28-Pin DIP (C)  
(400 MIL)  
28-Pin SOJ (DCJ)  
28-Pin LCC (EC)  
SC  
SDQ1  
SDQ2  
TR\/OE\  
DQ1  
DQ2  
ME\/WE\  
NC  
1
2
3
4
5
6
7
8
Vss  
SDQ4  
SDQ3  
28  
27  
26  
1
2
3
4
5
6
7
8
Vss  
SC  
SDQ1  
SDQ2  
TR\/OE\  
DQ1  
DQ2  
ME\/WE\  
NC  
28  
27  
26  
25  
24  
SDQ4  
SDQ3  
SE\  
25 SE\  
24 DQ4  
23 DQ3  
DQ4  
23 DQ3  
22 DSF  
21 CAS\  
QSF  
19 A0  
22  
21  
20  
19  
18  
17  
16  
15  
DSF  
CAS\  
QSF  
A0  
FEATURES  
• Class B High-Reliability Processing  
• DRAM: 262144 Words × 4 Bits  
SAM: 512 Words × 4 Bits  
9
9
RAS\  
A8  
A6  
A5  
A4  
20  
RAS\  
A8  
A6  
A5  
A4  
10  
11  
12  
13  
14  
10  
11  
12  
13  
14  
A1  
A2  
A3  
A7  
18  
17  
16  
15  
A1  
A2  
A3  
A7  
• Single 5-V Power Supply (±10% Tolerance)  
• Dual Port Accessibility–Simultaneous and Asynchronous Access  
From the DRAM and SAM Ports  
• Bidirectional-Data-Transfer Function Between the DRAM and the  
Serial-Data Register  
• 4 × 4 Block-Write Feature for Fast Area Fill Operations; As Many  
as Four Memory Address Locations Written per Cycle From an  
On-Chip Color Register  
• Write-Per-Bit Feature for Selective Write to Each RAM I/O; Two  
Write-Per-Bit Modes to Simplify System Design  
• Enhanced Page-Mode Operation for Faster Access  
• CAS-Before-RAS (CBR) and Hidden Refresh Modes  
• All Inputs/Outputs and Clocks Are TTL Compatible  
• Long Refresh Period: Every 8 ms (Max)  
Vcc  
Vcc  
28-Pin ZIP (CZ)  
1
3
5
7
DSF  
DQ3  
SDQ2  
Vss  
SDQ0  
TRG\  
DQ1  
GND  
A8  
A5  
Vcc  
A3  
A1  
QSF  
DQ2  
SE\  
SDQ3  
SC  
SDQ1  
DQ0  
W\  
RAS\  
A8  
2
4
6
8
9
10  
12  
14  
16  
18  
20 A4  
22 A7  
24 A2  
11  
13  
15  
17  
19  
21  
23  
25  
27  
26  
28  
A0  
CAS\  
• Up to 33-MHz Uninterrupted Serial-Data Streams  
• 3-State Serial I/Os Allow Easy Multiplexing of Video-Data  
Streams  
• 512 Selectable Serial-Register Starting  
• Split Serial-Data Register for Simplified Real-Time Register Reload  
28-Pin FP (F)  
SC  
SDQ1  
SDQ2  
TR\/OE\  
DQ1  
DQ2  
ME\/WE\  
NC  
1
Vss  
28  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
SDQ4  
SDQ3  
SE\  
DQ4  
DQ3  
DSF  
CAS\  
QSF  
A0  
A1  
A2  
A3  
A7  
OPTIONS  
• Timing  
MARKING  
RAS\  
A8  
A6  
A5  
A4  
100ns, 30ns/27ns  
120ns, 35ns/35ns  
-10  
-12  
Vcc  
• Package(s)  
MT Prefix SMJ Prefix  
Ceramic SOJ  
Ceramic DIP (400 mil)  
Ceramic LCC  
Ceramic Flat Pack  
Ceramic ZIP  
Ceramic LCC  
DCJ  
C
EC  
F
CZ  
---  
---  
JDM  
HMM  
---  
SVM  
HJM  
PIN NAME  
(SMJ)  
A0 - A8  
CAS\  
DQ0 - DQ3  
SE\  
PIN NAME  
(MT)  
A0 - A8  
CAS\  
DESCRIPTION  
Address Inputs  
Column Enable  
DQ1 - DQ4 DRAM Data In-Out/Write-Mask Bit  
SE\  
RAS\  
SC  
Serial Enable  
Row Enable  
Serial Data Clock  
RAS\  
SC  
SDQ0 - SDQ3 SDQ1 - SDQ4 Serial Data In-Out  
TRG\  
W\  
DSF  
QSF  
Vcc  
Vss  
TR\ /OE\  
ME\ /WE\  
DSF  
QSF  
Vcc  
Transfer Register/Q Output Enable  
Write-Mask Select/Write Enable  
Special Function Select  
Split-Register Activity Status  
5V Supply  
For more products and information  
please visit our web site at  
Vss  
Ground  
www.austinsemiconductor.com  
Ground (Important: Not Connected to  
internal Vss, Pin should be left open or  
tied to ground.  
GND  
NC  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
SMJ44C251B/MT42C4256  
Rev. 0.1 12/03  
1
1234567...57

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与SMJ44C251B-10HJM883C相关器件

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SMJ44C251B-10HM MICROSS

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 		Memory IC
SMJ44C251B10HMM AUSTIN

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 		256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
SMJ44C251B-10HMM AUSTIN

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 		256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
SMJ44C251B-10HMMT TI

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 		256KX4 VIDEO DRAM, 100ns, CDSO28, CERAMIC, LCC-28
SMJ44C251B-10JDL TI

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 		256KX4 VIDEO DRAM, 100ns, CDIP28, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-28
SMJ44C251B10JDM AUSTIN

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 		256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
SMJ44C251B10JDM MICROSS

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 		Video DRAM, 256KX4, 100ns, CMOS, CDIP28, 0.400 INCH, CERAMIC, DIP-28
SMJ44C251B-10JDM AUSTIN

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 		256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
SMJ44C251B-10JDM883C MICROSS

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 		Video DRAM, 256KX4, 100ns, CMOS, CDIP28, 0.400 INCH, CERAMIC, DIP-28
SMJ44C251B-10SV MICROSS

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 		Memory IC,

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