Datasheet > SMJ44400JD-8/XT

SMJ44400JD-8/XT

更新时间： 2024-02-11 04:08:31

品牌	Logo	应用领域
MICROSS		动态存储器内存集成电路
页数	文件大小	规格书
20页	338K
描述
EDO DRAM, 1MX4, 80ns, CMOS, CDIP20, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-20

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SMJ44400JD-8/XT 技术参数

是否Rohs认证：	不符合	生命周期：	Lifetime Buy
零件包装代码：	DIP	包装说明：	DIP, DIP20,.4
针数：	20	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.02
风险等级：	5.39	访问模式：	FAST PAGE WITH EDO
最长访问时间：	80 ns	其他特性：	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型：	COMMON	JESD-30 代码：	R-CDIP-T20
长度：	25.527 mm	内存密度：	4194304 bit
内存集成电路类型：	EDO DRAM	内存宽度：	4
功能数量：	1	端口数量：	2
端子数量：	20	字数：	1048576 words
字数代码：	1000000	工作模式：	ASYNCHRONOUS
最高工作温度：	125 °C	最低工作温度：	-55 °C
组织：	1MX4	输出特性：	3-STATE
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装代码：	DIP
封装等效代码：	DIP20,.4	封装形状：	RECTANGULAR
封装形式：	IN-LINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	5 V	认证状态：	Not Qualified
刷新周期：	1024	座面最大高度：	4.445 mm
自我刷新：	NO	最大待机电流：	0.004 A
子类别：	DRAMs	最大压摆率：	0.085 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	NO
技术：	CMOS	温度等级：	MILITARY
端子形式：	THROUGH-HOLE	端子节距：	2.54 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	10.16 mm	Base Number Matches：	1

SMJ44400JD-8/XT 数据手册

DRAM

SMJ44400

Austin Semiconductor, Inc.

1M x 4 DRAM

PIN ASSIGNMENT

(Top View)

DYNAMIC RANDOM-ACCESS

MEMORY

20-Pin DIP (JD)

(400 MIL)

AVAILABLE AS MILITARY

SPECIFICATIONS

• SMD 5962-90847

• MIL-STD-883

DQ1

DQ2

RAS\

Vss

DQ4

DQ3

CAS\

OE\

FEATURES

• Organized 1,048,576 x 4

• Single +5V ±10% power supply

• Enhanced Page-Mode operation for faster memory access

P Higher data bandwidth than conventional page-mode

parts

P Random Single-Bit Access within a row with a column

address

Vcc 10

Pin Name

A0 - A9 Address Inputs

Function

CAS\

Column-Address Strobe

DQ1 - DQ4 Data Inputs/Outputs

• CAS\-Before-RAS\ (CBR) Refresh

• Long Refresh period: 1024-cycle Refresh in 16ms (Max)

• 3-State unlatched Output

• Low Power Dissipation

• All Inputs/Outputs and Clocks are TTL Compatible

• Processing to MIL-STD-883, Class B available

OE\

RAS\

Vcc

Vss

Output Enable

Row-Address Strobe

Write Enable

5V Supply

Ground

OPTIONS

• Timing

80ns access

100ns access

120ns access

MARKING

The SMJ44400 is offered in a 400-mil, 20-pin ceramic

side-brazed dual-in-line package (JD suffix) that is character-

ized for operation from -55°C to +125°C.

-8

-10

-12

OPERATION

• Package(s)

Ceramic DIP (400mils)

Enhanced Page Mode

No. 113

Enhanced page-mode operation allows faster memory

access by keeping the same row address while selecting

random column addresses. The time for row-address setup

and hold and address multiplex is eliminated. The maximum

number of columns that can be accessed is determined by the

maximum RAS\ low time and the CAS\ page cycle time used.

With minimum CAS\ page cycle time, all 1024 columns

specified by column addresses A0 through A9 can be accessed

without intervening RAS\ cycles.

• Operating Temperature Ranges

Industrial (-40^oC to +85^oC)

Military (-55^oC to +125^oC)

GENERAL DESCRIPTION

The SMJ44400 is a series of 4,194,304-bit dynamic ran-

dom-access memories (DRAMs), organized as 1,048,576

words of four bits each. This series employs state-of-the-art

technology for high performance, reliability, and low-power

operation.

The SMJ44400 features maximum row access times of

80ns, 100ns, and 120ns. Maximum power dissipation is as

low as 360mW operating and 22mW standby.

All inputs and outputs, including clocks, are compatible

with Series 54 TTL. All addressses and data-in lines are latched

on-chip to simplify system design. Data out is unlatched to

allow greater system flexibility.

Unlike conventional page-mode DRAMs, the column-

address buffers in this device are activated on the

(continued)

For more products and information

please visit our web site at

www.austinsemiconductor.com

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

SMJ44400

Rev. 1.0 6/01

12 3 4 5 6 7...20

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与SMJ44400JD-8/XT相关器件

型号	品牌	获取价格	描述	数据表
SMJ4461-15JDL	TI	获取价格	64KX4 VIDEO DRAM, 150ns, CDIP24, 0.400 INCH, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-24
SMJ4461-15JDS	TI	获取价格	64KX4 VIDEO DRAM, 150ns, CDIP24, 0.400 INCH, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-24
SMJ4464-12FVL	TI	获取价格	64KX4 PAGE MODE DRAM, 120ns, CQCC18, CERAMIC, LCC-18
SMJ4464-12FVS	TI	获取价格	64KX4 PAGE MODE DRAM, 120ns, CQCC18, CERAMIC, LCC-18
SMJ4464-12JDL	ROCHESTER	获取价格	Page Mode DRAM, 64KX4, 120ns, NMOS, CDIP18, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, CERA
SMJ4464-12JDS	TI	获取价格	64KX4 PAGE MODE DRAM, 120ns, CDIP18, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DI
SMJ4464-12JDS	ROCHESTER	获取价格	Page Mode DRAM, 64KX4, 120ns, NMOS, CDIP18, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, CERA
SMJ4464-15FVL	TI	获取价格	64KX4 PAGE MODE DRAM, 150ns, CQCC18, CERAMIC, LCC-18
SMJ4464-15FVS	TI	获取价格	64KX4 PAGE MODE DRAM, 150ns, CQCC18, CERAMIC, LCC-18
SMJ4464-15JDL	TI	获取价格	64KX4 PAGE MODE DRAM, 150ns, CDIP18, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DI

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