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SMA6J75CA PDF预览

SMA6J75CA

更新时间： 2024-11-05 13:45:15
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网光电二极管
页数 文件大小 规格书
6页 780K
描述
SMA封装的600W表面贴装型瞬态电压抑制器

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中文翻译

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SMA6J75CA 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PDSO-C2Reach Compliance Code：unknown
风险等级：5.71其他特性：EXCELLENT CLAMPING CAPABILITY
最大击穿电压：92.1 V最小击穿电压：83.3 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AC
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：600 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-65 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性：BIDIRECTIONAL
最大功率耗散：3.3 W参考标准：IEC-61000-4-2, 4-4
最大重复峰值反向电压：75 V表面贴装：YES
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：C BEND端子位置：DUAL
Base Number Matches：1

SMA6J75CA 数据手册

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TVS Diodes  
Surface Mount – 600W > SMA6J series  
Pb e3  
RoHS  
SMA6J Series  
Uni-directional  
Description  
The SMA6J series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Bi-directional  
Features  
• Small DO-214AC SMT  
footprint for minimal board  
space requirement  
• Fast response time:  
typically less than 1.0ps  
from 0 Volts to VBR min  
•Typical IR < 1µA when  
•Typical failure mode is a  
short circuit condition for  
current events exceeding  
component rating  
• Whisker test is conducted  
based on JEDEC  
JESD201A per its table 4a  
and 4c  
• IEC 61000-4-2 ESD  
V
BR min > 12 V  
Agency Approvals  
• High temperature reflow  
soldering guaranteed:  
260°C/40sec  
• VBR @TJ= VBR@25°C  
x (1+αT x (TJ - 25))  
(αT:Temperature  
Coefficient, typical value  
is 0.1%)  
AGENCY  
AGENCY FILE NUMBER  
E230531  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
30kV(Air), 30kV (Contact)  
• UL Recognized compound  
meeting flammability  
rating V-0  
• Meet MSL level1, per  
J-STD-020, lead-frame  
maximun peak of 260°C  
• ESD protection of data  
lines in accordance with  
IEC 61000-4-2  
• Built-in strain relief  
• Glass passivated junction  
• Low inductance  
• Excellent clamping  
capability  
• 600W peak pulsepower  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycle): 0.01%  
Parameter  
Symbol  
PPPM  
Value  
600  
Unit  
W
Peak Pulse Power Dissipation by  
10/1000μs Waveform (Fig.2)  
(Note 1), (Note 2)  
Power Dissipation on Infinite Heat  
Sink atTL=50OC  
PD  
3.3  
60  
W
A
• Matte tin lead–free plated  
• Pb-free E3 means 2nd level  
interconnect is Pb-free  
and the terminal finish  
material is tin(Sn) (IPC/  
JEDEC J-STD-609A.01)  
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave (Note 3)  
IFSM  
Maximum Instantaneous Forward  
Voltage at 25A for Unidirectional  
Only  
VF  
3.5  
V
OperatingTemperature Range  
StorageTemperature Range  
TJ  
-65 to 150  
-65 to 175  
30  
°C  
°C  
TSTG  
RθJL  
RθJA  
Applications  
TVS components are ideal for the protection of I/O  
Interfaces, VCC bus and other vulnerable circuits used in  
Telecom, Computer, Industrial and Consumer electronic  
applications.  
TypicalThermal Resistance  
Junction to Lead  
°C/W  
°C/W  
TypicalThermal Resistance  
Junction to Ambient  
120  
Notes:  
1. Non-repetitive current pulse, per Fig.4 and derated aboveTJ (initial) =25ºC per Fig. 3.  
Functional Diagram  
2. Mounted on 5.0x5.0mm copper pad to each terminal.  
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional  
component only.  
Bi-directional  
Cathode  
Anode  
Uni-directional  
© 2018 Littelfuse, Inc. Revised: 05/08/18  
littelfuse.com  
Specifications are subject to change without notice.  
123456

中文翻译

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