Datasheet > SMA6J8.0A

SMA6J8.0A

更新时间： 2024-02-26 18:24:46

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网光电二极管
页数	文件大小	规格书
6页	780K
描述
Trans Voltage Suppressor Diode,

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SMA6J8.0A 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.68	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
Base Number Matches：	1

SMA6J8.0A 数据手册

TVS Diodes

Surface Mount – 600W > SMA6J series

Pb e3

RoHS

SMA6J Series

Uni-directional

Description

The SMA6J series is designed speciﬁcally to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Bi-directional

Features

• Small DO-214AC SMT

footprint for minimal board

space requirement

• Fast response time:

typically less than 1.0ps

from 0 Volts to V_BRmin

•Typical I_R< 1µA when

•Typical failure mode is a

short circuit condition for

current events exceeding

component rating

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC 61000-4-2 ESD

_BRmin > 12 V

Agency Approvals

• High temperature reﬂow

soldering guaranteed:

260°C/40sec

• V_BR@T_J= V_BR@25°C

x (1+αT x (T_J- 25))

(αT:Temperature

Coefﬁcient, typical value

is 0.1%)

AGENCY

AGENCY FILE NUMBER

E230531

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

30kV(Air), 30kV (Contact)

• UL Recognized compound

meeting ﬂammability

rating V-0

• Meet MSL level1, per

J-STD-020, lead-frame

maximun peak of 260°C

• ESD protection of data

lines in accordance with

IEC 61000-4-2

• Built-in strain relief

• Glass passivated junction

• Low inductance

• Excellent clamping

capability

• 600W peak pulsepower

capability at 10/1000μs

waveform, repetition rate

(duty cycle): 0.01%

Parameter

Symbol

P_PPM

Value

600

Unit

Peak Pulse Power Dissipation by

10/1000μs Waveform (Fig.2)

(Note 1), (Note 2)

Power Dissipation on Inﬁnite Heat

Sink atT_L=50^OC

P_D

3.3

• Matte tin lead–free plated

• Pb-free E3 means 2^ndlevel

interconnect is Pb-free

and the terminal ﬁnish

material is tin(Sn) (IPC/

JEDEC J-STD-609A.01)

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave (Note 3)

I_FSM

Maximum Instantaneous Forward

Voltage at 25A for Unidirectional

Only

V_F

3.5

OperatingTemperature Range

StorageTemperature Range

T_J

-65 to 150

-65 to 175

°C

T_STG

R_θJL

R_θJA

Applications

TVS components are ideal for the protection of I/O

Interfaces, V_CCbus and other vulnerable circuits used in

Telecom, Computer, Industrial and Consumer electronic

applications.

TypicalThermal Resistance

Junction to Lead

°C/W

TypicalThermal Resistance

Junction to Ambient

120

Notes:

1. Non-repetitive current pulse, per Fig.4 and derated aboveT_J(initial) =25ºC per Fig. 3.

Functional Diagram

2. Mounted on 5.0x5.0mm copper pad to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional

component only.

Bi-directional

Cathode

Anode

Uni-directional

littelfuse.com

Speciﬁcations are subject to change without notice.

12 3 4 5 6

下载PDF

与SMA6J8.0A相关器件

型号	品牌	描述	获取价格	数据表
SMA6J8.0A/51	VISHAY	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient	获取价格
SMA6J8.0A/5A	VISHAY	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient	获取价格
SMA6J8.0A/61	VISHAY	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient	获取价格
SMA6J8.0A-C	SECOS	Peak Power Surface Mount TVS	获取价格
SMA6J8.0A-E3/5A	VISHAY	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC PACKAGE	获取价格
SMA6J8.0A-E3/61	VISHAY	TVS DIODE 8V 18.2V DO214AC	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

SMA6J8.0A

SMA6J8.0A 技术参数

SMA6J8.0A 数据手册

与SMA6J8.0A相关器件

与SMA6J8.0A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMA6J8.0A

SMA6J8.0A 技术参数

SMA6J8.0A 数据手册

与SMA6J8.0A相关器件

与SMA6J8.0A相关文章

您还可以找

您在本页遇到什么问题？