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SMA6J8.0A PDF预览

SMA6J8.0A

更新时间: 2024-11-05 14:45:19
品牌 Logo 应用领域
鲁光 - LGE 瞬态抑制二极管
页数 文件大小 规格书
3页 897K
描述
瞬态抑制二极管

SMA6J8.0A 技术参数

Case Style:SMAPpk(W):600
MIN_(V):8.89MAX_(V):9.83
Vwm_(V):8Ir_(uA):50
Ippm_(A):44.1Vc_(V):13.6
class:Diodes

SMA6J8.0A 数据手册

 浏览型号SMA6J8.0A的Datasheet PDF文件第2页浏览型号SMA6J8.0A的Datasheet PDF文件第3页 
SMA6J Series  
Surface Mount Transient  
Voltage Suppressors  
Reverse Voltage: 5.0 to 58 V  
Peak Pulse Power: 600 W  
SMA/ DO-214AC  
Features  
Glass passivated chip  
0.064 1.63  
600 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty  
cycle):0.01 %  
0.049  
[ ]  
1.23  
0.109 2.76  
0.099 2.51  
[
]
Low leakage  
Uni and Bidirectional unit  
Excellent clamping capability  
Very fast response time  
RoHS compliant  
0.179 4.55  
0.162 4.10  
[
]
0.012 0.30  
Mechanical Data  
Case: Molded plastic  
0.006  
[ ]  
0.15  
0.089 2.26  
0.077 1.96  
[
]
Epoxy: UL 94V-0 rate flame retardant  
Lead: Solderable per MIL-STD-750, method  
2026  
0.06 1.51  
0.03 0.75  
0.008 0.20  
0.00  
[
]
0
[
]
0.206 5.22  
0.192 4.87  
Polarity: Color band denotes cathode end  
except Bipolar  
[
]
Dimensions : inch [ mm ]  
Mounting position: Any  
Maximum Ratings(TA=25unless otherwise noted)  
Value  
600  
UNIT  
W
Parameter  
Symbol  
PPP  
Peak power dissipation with a 10/1000μs waveform(1)  
Peak pulse current wih a 10/1000μs waveform(1)  
Power dissipation on infinite heatsink at TL = 75 °C  
Peak forward surge current, 8.3 ms single half sine-  
IPP  
PD  
See Next Table  
3.0  
A
W
IFSM  
60  
A
wave unidirectional only(2)  
Maximum instantaneous forward voltage at 25 A for  
unidirectional only(3)  
VF  
3.5  
V
Operating junction and storage temperature range  
TJ, TSTG  
–55 to +150  
°C  
Note:  
(1)Non-repetitive current pulse per Fig.5 and derated above TA= 25 °C per Fig.1  
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
http://www.lgesemi.com  
Revision:20170701-P1  
mail:lge@lgesemi.com  

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