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SMA6J8.0A PDF预览

SMA6J8.0A

更新时间: 2024-11-04 09:21:59
品牌 Logo 应用领域
威世 - VISHAY 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
5页 101K
描述
Surface Mount Transient Voltage Suppressors

SMA6J8.0A 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.74
Is Samacsys:N最大击穿电压:9.83 V
最小击穿电压:8.89 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e0最大非重复峰值反向功率耗散:600 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:8 V表面贴装:YES
技术:ZENER端子面层:TIN LEAD
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SMA6J8.0A 数据手册

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New Product  
SMA6J5.0A thru SMA6J28A  
Vishay General Semiconductor  
Surface Mount Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Available in uni-directional polarity only  
• Excellent clamping capability  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
DO-214AC (SMA)  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive and  
telecommunication.  
PRIMARY CHARACTERISTICS  
VWM  
5.0 V to 28 V  
600 W  
4000 W  
4 W  
P
PPM (10 x 1000 µs)  
P
PPM (8 x 20 µs)  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
P
D at TA = 50 °C  
IFSM  
50 A  
Molding compound meets UL 94 V-0 flammability  
rating  
TJ max.  
150 °C  
Base P/N-E3 - RoHS compliant, commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
VALUE  
UNIT  
with 10/1000 µs waveform (1)(2)  
with 8/20 µs waveform  
600  
4000  
Peak pulse power dissipation  
PPPM  
W
with 10/1000 µs waveform (1)(2)  
with 8/20 µs waveform  
Peak pulse current  
IPPM  
See next table  
A
Power dissipation on infinite heatsink, TA = 50 °C  
Peak forward surge current 8.3 ms single half sine-wave  
Operating junction and storage temperature range  
PD  
IFSM  
4.0  
50  
W
A
TJ, TSTG  
- 55 to + 150  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 1 and derated above TA = 25 °C per Fig. 2.  
(2) Mounted on P.C.B. with 5.0 x 5.0 mm copper pads attached to each terminal  
Document Number: 89115  
Revision: 30-Oct-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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