Datasheet > SLP_F16N65S

SLP_F16N65S

更新时间： 2024-11-21 18:09:23

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
9页	1193K
描述
TO-220C&TO-220F

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SLP_F16N65S 数据手册

SLP16N65S / SLF16N65S

650V N-channel MOSFET

General Description

Features

This Power MOSFET is produced using Msemitek‘s

advanced planar stripe DMOS technology.

- 16A, 650V, R_DS(on)typ= 0.410Ω@V_GS= 10 V

- Low gate charge ( typical 35nC)

- LowCrss ( typica5.5pF)

- Fast switching

- 100% avalanche tested

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge topology.

- Improved dv/dt capability

TO-220C

TO-220F

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLP16N65S / SLF16N65S

Units

Drain-Source Voltage

650

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

10.0

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

- Pulsed

Gate-Source Voltage

(Note 2)

(Note 1)

Single Pulsed Avalanche Energy

Avalanche Current

390

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

V/ns

(Note 3)

dv/dt

P_D

- Derate above 25℃

0.30

W/℃

℃

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

℃

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

SLP16N65S / SLF16N65S

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

3.70

R_θJC

R_θJS

R_θJA

42.8

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.0 Apr. 2020

12 3 4 5 6 7...9

中文翻译

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