Datasheet > SLP_F65R170E7

SLP_F65R170E7

更新时间： 2024-10-15 18:09:55

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
9页	992K
描述
TO-220F&TO-220C

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中文翻译

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SLP_F65R170E7 数据手册

SLP65R170E7 / SLF65R170E7

650V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Msemitek‘s

advanced Superjunction MOSFET technology.

- 22A, 650V, R_DS(on)=170mΩ@V_GS= 10 V

- Low gate charge(typ. Qg = 30.2nC)

- High ruggedness Ultra

- Fast switching

- 100% avalanche tested

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies.

- Improved dv/dt capability

TO-220C

TO-220F

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLP65R170E7 / SLF65R170E7

Units

Drain-Source Voltage

650

22 *

12*

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

- Pulsed

57 *

ꢀ

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

985

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

MOSFET dv/dt

1.62

dv/dt

V/ns

100

Power Dissipation (T_C= 25℃)

W/℃

℃

P_D

- Derate above 25℃

0.29

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

T_L

260

℃

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

SLP65R170E7 / SLF65R170E7

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

3.5

R_θJS

62.5

R_θJA

Msemitek Co., Ltd

http://www.msemitek.com

Rev. 1.2 Jun . 2021

12 3 4 5 6 7...9

中文翻译

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