Datasheet > SLP_F4N70S

SLP_F4N70S

更新时间： 2024-11-19 18:09:47

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
10页	1121K
描述
TO-220C&TO-220F

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中文翻译

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SLP_F4N70S 数据手册

SLP4N70S / SLF4N70S

700V N-Channel MOSFET

General Description

Features

- N-Channel:700V 4A

This Power MOSFET is produced using Msemitek‘s

advanced planar stripe DMOS technology.

R_DS(on)Typ=2.3Ω@V_GS= 10 V

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge topology.

- Very Low On-resistance R_DS(ON)

- Low Crss

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

TO-220C

TO-220F

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLP4N70S / SLF4N70S

Units

Drain-Source Voltage

700

V_DSS

Drain Current

- Continuous (T_C= 25℃)

- Continuous (T_C= 100℃)

- Pulsed

I_D

2.3

(Note 1)

I_DM

V_GSS

E_AS

Drain Current

Gate-Source Voltage

Single Pulsed Avalanche Energy

Power Dissipation (T_C= 25℃)

100

P_D

R _θJC

T_J, T_STG

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

3.13

℃/W

℃

-55 to +150

300

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

℃

* Drain current limited by maximum junction temperature.

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.0 Jul. 2021

12 3 4 5 6 7...10

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