Datasheet > SLP_F18N50S

SLP_F18N50S

更新时间： 2024-11-19 18:09:27

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
9页	1195K
描述
TO-220F&TO-220C

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SLP_F18N50S 数据手册

SLP18N50S / SLF18N50S

500V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Maple semi‘s

advanced planar stripe DMOS technology.

- 18A, 500V, R_DS(on)= 225mΩ@V_GS= 10 V

- Low gate charge ( typical 38nC)

- Low Crss ( typical 6.6pF)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge topology.

TO-220C

TO-220F

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLP18N50S / SLF18N50S

Units

Drain-Source Voltage

500

18 *

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

11.7 *

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

- Pulsed

72 *

ꢀ

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

662

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

V/ns

dv/dt

P_D

- Derate above 25℃

0.27

W/℃

℃

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

T_L

300

℃

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

SLP18N50S / SLF18N50S

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

3.68

R_θJS

44.0

R_θJA

Msemitek Co., Ltd

http://www.msemitek.com

Rev. 1.1 Apr . 2020

12 3 4 5 6 7...9

中文翻译

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