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SLF70R900S2 PDF预览

SLF70R900S2

更新时间: 2024-11-21 18:09:31
品牌 Logo 应用领域
美浦森 - Maplesemi /
页数 文件大小 规格书
5页 710K
描述
TO-220F

SLF70R900S2 数据手册

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SLD70R900S2 / SLF70R900S2  
700V N-Channel Power MOSFET  
General Description  
Features  
This Power MOSFET is produced using Maple semi‘s  
advanced planar stripe DMOS technology.  
- 5A, 700V, RDS(on) typ. = 0.8Ω@VGS = 10 V  
- Extended Safe Operating Area  
- Ease of Paralleling  
- Fast Switching  
- 100% avalanche tested  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switched mode power supplies,  
active power factor correction based on half bridge topology  
- 100% Single Pulse avalanche energy Test  
D
D
G
TO-220F  
D-PAK  
G
G D S  
S
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Drain-to-Source Breakdown Voltage  
SLF70R900S2 SLD70R900S2  
Units  
700  
5
V
VDSS  
Drain Current  
Drain Current  
Drain Current  
- Continuous (TC = 25)  
- Continuous (TC = 100)  
- Pulsed  
A
A
ID  
3.2  
18  
IDM  
VGS  
Ptot  
TJ,  
A
Gate-Source Voltage  
30  
±
V
Power Dissipation (TC = 25)  
Operating Junction Temperature Range  
Single Pulsed Avalanche Energy  
24  
58  
W
mJ  
-55 to +150  
180  
(Note 2)  
EAS  
Electrical Characteristics @ TJ=25(unless otherwise specified)  
Symbol  
Parameter  
Drain-source Voltage  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
VDS  
VGS =0V, ID=250µA  
700  
V
Ω
V
RDS(on)  
VGS(th)  
Static Drain-to-Source on-Resistance  
Gated Threshold Voltage  
VGS =10V, ID=20A  
0.8  
3.0  
0.9  
4.0  
VDS= VGS, ID=250µA  
2.0  
MAPLE SEMICONDUCTOR CO., LTD  
http://www.Maplesemi.com  
Rev.1.0 Oct. 2019  

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