SLP840C / SLF840C
500V N-Channel MOSFET
General Description
Features
This Power MOSFET is produced using Maple semi‘s
advanced planar stripe DMOS technology.
- 8A, 500V, RDS(on)typ. = 0.64Ω@VGS = 10 V
- Low gate charge ( typical 31.5nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge topology.
D
G
TO-220
TO-220F
G D S
G D S
S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol
Parameter
SLP840C
SLF840C
Units
V
Drain-Source Voltage
500
VDSS
Drain Current
- Continuous (T = 25
)
8.0
4.8
32
8.0 *
4.8 *
32 *
A
℃
C
ID
- Continuous (T = 100
)
A
℃
C
(Note 1)
IDM
VGSS
EAS
IAR
Drain Current
- Pulsed
A
Gate-Source Voltage
30
V
±
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
285
8
mJ
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
12.28
4.5
mJ
V/ns
W
dv/dt
Power Dissipation (T = 25
)
123
36
℃
C
PD
- Derate above 25
0.98
0.28
W/
℃
℃
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
300
℃
Maximum lead temperature for soldering purposes,
TL
℃
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
Parameter
SLP840C
SLF840C
3.52
Units
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
1.02
0.5
/W
/W
/W
℃
℃
℃
--
RθJS
62.5
62.5
RθJA
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 January. 2015