Datasheet > SLF750U

SLF750U

更新时间： 2024-11-21 18:09:51

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
9页	1144K
描述
TO-220F

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SLF750U 数据手册

SLF750U

430V N-Channel MOSFET

Features

General Description

- N-Channel:430V 11A

R_DS(on)Typ=0.54Ω@V_GS= 10 V

This Power MOSFET is produced using Msemitek‘s

advanced planar stripe DMOS technology.

- Very Low On-resistance RDS(ON)

- LowCrss

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge topology.

TO-220F

SLF750U

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLF750U

430

Units

Drain-Source Voltage

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

6.7

(Note 1)

I_DM

V_GSS

E_AS

Drain Current

- Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Power Dissipation (T_C= 25℃)

437

P_D

R _θJC

T_J, T_STG

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

3.57

℃/W

℃

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

300

℃

* Drain current limited by maximum junction temperature.

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.3 Dec. 2022

12 3 4 5 6 7...9

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