Datasheet > SLF8N60C

SLF8N60C

更新时间： 2024-11-21 18:09:23

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
7页	303K
描述
TO-220F

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SLF8N60C 数据手册

SLP8N60C / SLF8N60C

600V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Maple semi‘s

advanced planar stripe DMOS technology.

- 7.5A, 600V, R_{DS(on) typ.}= 1.0Ω@V_GS= 10 V

- Low gate charge ( typical 29nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge topology.

TO-220

TO-220F

G D S

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLP8N60C

SLF8N60C

Units

Drain-Source Voltage

600

V_DSS

Drain Current

- Continuous (T_C= 25℃)

7.5

4.5

7.5 *

4.5 *

I_D

- Continuous (T_C= 100℃)

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

- Pulsed

30 *

ꢀ

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

230

7.5

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

14.7

4.5

V/ns

dv/dt

210

ꢀ

0.32

P_D

- Derate above 25℃

1.68

W/℃

℃

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

300

Maximum lead temperature for soldering purposes,

T_L

℃

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

SLP8N60C

0.6

SLF8N60C

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

3.1

R_θJC

0.5

R_θJS

62.5

R_θJA

Maple Semiconductor CO., LTD

http://www.maplesemi.com

Rev. 01 January 2017

12 3 4 5 6 7

中文翻译

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