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SLD6S24A PDF预览

SLD6S24A

更新时间: 2024-11-22 14:56:31
品牌 Logo 应用领域
力特 - LITTELFUSE 电子局域网(LAN)标准开关二极管电视
页数 文件大小 规格书
6页 745K
描述
SLD6S单向TVS二极管系列采用带引线改装型SMTO-263封装。 它旨在保护敏感电子设备免受ESD、EFT、10/1000浪涌事件和电感性负载开关电压瞬态事件的影响,适用于条件恶劣的汽车负载突

SLD6S24A 数据手册

 浏览型号SLD6S24A的Datasheet PDF文件第2页浏览型号SLD6S24A的Datasheet PDF文件第3页浏览型号SLD6S24A的Datasheet PDF文件第4页浏览型号SLD6S24A的Datasheet PDF文件第5页浏览型号SLD6S24A的Datasheet PDF文件第6页 
TVS Diodes Datasheet  
SLD6S Series  
Surface Mount  
Pb e3  
ꢀꢁꢂS  
Description  
The SLD6S unidirectional TVS Diode series is housed in a SMTO-  
263 package with lead modifications. It is designed to protect  
sensitive electronics against ESD, EFT, 10/1000 surge events and  
inductive load switching voltage transient events for severe  
Automotive Load Dump applications.  
Features  
AEC-Q101 qualified with  
automotive grade (PPAP  
capable)  
Excellent clamping capability  
Low incremental surge  
resistance  
SMTO-263 package, and foot  
print is compatible to industrial  
popular DO-218AB package  
UL Recognized compound  
meeting flammability rating V-0  
Meets MSL level 1, per  
J-STD-020, High temperature  
reflow soldering guaranteed:  
260°C/10sec at terminals  
Meet ISO7637-2 5a/5b  
protection, ISO16750 and  
JASO D-001 load dump test  
(refer to APP note for details)  
Agency Approvals  
Agency  
Agency File Number  
For surface mounted  
applications to optimize board  
space  
VBR @TJ= VBR@25°C x (1+αT  
x (TJ - 25))(αT:Temperature  
Coefficient, typical value is  
0.1%  
E230531  
Low profile package  
Matte tin lead–free plated  
Glass passivated chip junction  
in modifiedTO-263 package  
Maximum Ratings andThermal Characteristics  
Halogen free and RoHS  
compliant  
(TA=25OC unless otherwise noted)  
ESD protection of data lines in  
accordance with IEC 61000-4-  
2, 30kV(Air), 30kV (Contact)  
Pb-free E3 means 2nd level  
interconnect is Pb-free and  
the terminal finish material is  
tin (Sn) (IPC/JEDEC J-STD-  
609A.01)  
Parameter  
Symbol Value Unit  
Peak Pulse Power Dissipation  
1. 10ms / 150ms test waveform  
2. 10μs/1000μs test waveform  
Power dissipation on infinite heatsink atTA=  
25 °C  
Maximum Instantaneous Forward Voltage at  
100A for Unidirectional only  
Peak forward surge current 8.3m single half  
sine-wave  
Operating Junction and Storage  
Temperature Range  
1800  
EFT protection of data lines in  
accordance with IEC 61000-  
4-4  
PPPM  
W
4600  
6
PD  
VF  
W
V
Fast response time: typically  
less than 1.0ps from 0 Volts to  
1.8  
VBR min  
IFSM  
800  
A
-55 to  
150  
TJ, TSTG  
°C  
Applications  
TypicalThermal Resistance Junction to case RθJC  
1.1  
°C/W  
Designed to protect sensitive electronics from:  
TypicalThermal Resistance Junction to  
RθJA  
12.3 °C/W  
Ambient  
Inductive Load Switching  
Alternator Load Dump  
Functional Diagram  
ꢊꢇꢄꢋꢅꢂe  
ꢌꢆꢅꢂe  
ꢉꢆiꢁꢂireꢃꢄiꢅꢆꢇꢈ  
© 2021 Littelfuse, Inc.  
Specifications are subject to change without notice.  
1
Revised: GD. 09/27/21  

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