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SLD-70BG2B PDF预览

SLD-70BG2B

更新时间: 2024-11-19 02:50:43
品牌 Logo 应用领域
ADVANCEDPHOTONIX /
页数 文件大小 规格书
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描述
Infrared Rejection Filter Planar Photodiode

SLD-70BG2B 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
HTS代码:8541.40.60.50风险等级:5.01
Base Number Matches:1

SLD-70BG2B 数据手册

  
SLD-70BG2  
Infrared Rejection Filter  
Planar Photodiode  
Features  
1.9  
Optical  
Clear Epoxy  
Anode  
38 nom.  
Red dot  
Low capacitance, fast switching time  
Linear response vs irradiance  
IR blocking filter  
Multiple dark current ranges available  
5.1  
7.2  
Description  
BGFilter  
0.50-0.52  
The planar photodiode is designed to operate in  
either photoconductive or photovoltaic modes. This  
diode incorporates a BG filter that rejects infrared  
wavelengths and approximates the response of the  
human eye. High sensitivity and low dark current  
allow use in low irradiance applications. The  
photodiode measures 3.6 mm X 3.6 mm (0.140” X  
0.140”) and is supplied on a ceramic base with a  
clear epoxy dome package.  
3.4  
Max.  
6.3  
Cathode  
Chip Size = 3.6 mm X 3.6 mm  
Active Area = 9.8 sq.mm.  
Dimensions in mm. (+/- 0.2)  
Directional Sensitivity Characteristics  
40°  
30°  
20°  
10°  
1.0  
50°  
0.8  
0.6  
0.4  
0.2  
0.0  
Half Angle = 60°  
Absolute Maximum Ratings  
60°  
70°  
Storage Temperature  
Operating Temperature  
Soldering Temperature (1)  
-20C to +85C  
-20C to +85C  
260C  
80°  
90°  
Notes: (1) >2 mm from case for < 5 sec.  
(2) Ee = source @ 2854K  
100°  
(3) Ee = source @ = 580 nm  
1.0  
0.8  
0.6  
0.4  
20°  
40°  
60° 80° 100° 120°  
Electrical Characteristics (TA=25C unless otherwise noted)  
Symbol  
Parameter  
Short Circuit Current  
Open Circuit Voltage  
Min  
40  
Typ  
55  
0.40  
Max  
Units  
A  
V
Test Conditions  
ISC  
VOC  
ID  
VR=0V, Ee=25mW/cm2 (2)  
Ee=25mw/cm2 (2)  
Reverse Dark Current:  
SLD-70BG2A  
100  
100  
20  
5
1
180  
4
nA  
nA  
nA  
nA  
nA  
pF  
s  
s  
%/C  
V
nm  
nm  
VR=100mV, Ee=0  
VR=5V, Ee=0  
VR=5V, Ee=0  
VR=5V, Ee=0  
VR=5V, Ee=0  
VR=0V, Ee=0, f=1MHz  
VR=5V, RL=1k(3)  
VR=5V, RL=1k(3)  
(2)  
SLD-70BG2B  
SLD-70BG2C  
SLD-70BG2D  
SLD-70BG2E  
CJ  
tR  
tF  
TCI  
VBR  
P  
Junction Capacitance  
Rise Time  
Fall Time  
Temp. Coef., ISC  
6
+0.2  
Reverse Breakdown Voltage  
Maximum Sensitivity Wavelength  
Sensitivity Spectral Range  
Acceptance Half Angle  
50  
IR=100A  
550  
60  
400  
700  
R  
1/2  
deg (off center-line)  
Specifications subject to change without notice.  
REV 04/30-14  
Advanced Photonix Canada Inc.,  
300 St-Sacrement  
Suite 519  
Page 1  
Phone:(514) 768-8000  
Fax: (514) 768-8889  
http://www.advancedphotonix.com  
Montréal, QC, Canada H2Y 1X4  

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General handling precautions