5秒后页面跳转
SLD-70IR2 PDF预览

SLD-70IR2

更新时间: 2024-11-21 02:52:03
品牌 Logo 应用领域
SILONEX 光电二极管光电二极管
页数 文件大小 规格书
1页 27K
描述
Visible Light Rejection Filter Planar Photodiode

SLD-70IR2 技术参数

生命周期:TransferredReach Compliance Code:unknown
HTS代码:8541.40.60.50风险等级:5.83

SLD-70IR2 数据手册

  
SLD-70IR2  
Visible Light Rejection Filter  
Planar Photodiode  
Features  
1.9  
38 nom.  
Red dot  
·
·
·
·
·
·
·
Planar Photodiode  
Low capacitance  
Fast switching time  
Low leakage current  
Linear response vs irradiance  
IR Pass Filter  
Multiple dark current ranges available  
Anode  
5.1  
IR Epoxy  
7.2  
6.3  
0.5  
3.4  
Description  
Cathode  
max.  
The planar photodiode is designed to maximize  
response in the infrared spectrum of received  
energy. The photodiode is supplied on a ceramic  
base with an IR transmissive epoxy dome package  
that rejects visible light wavelengths. Photodiodes  
may operate in either photovoltaic or reverse bias  
mode to provide low capacitance with fast switching  
speed. High sensitivity and low dark current allow  
use in even low irradiance applications.  
Chip Size = 3.6 mm X 3.6 mm  
Active Area = 9.8 sq.mm.  
Dimensions in mm.  
Directional Sensitivity Characteristics  
40°  
30°  
20° 10°  
1.0  
50°  
0.8  
0.6  
0.4  
0.2  
0.0  
Half Angle = 60°  
60°  
70°  
Absolute Maximum Ratings  
Storage Temperature  
Operating Temperature  
Soldering Temperature (3)  
-20°C to +75°C  
-20°C to +75°C  
260°C  
80°  
90°  
Notes: (1) Ee = source @ 2854°K.  
(2) Ee = source @ l = 880 nm  
(3) >2 mm from case for < 5 sec.  
100°  
1.0  
0.8  
0.6  
0.4  
20° 40°  
60° 80° 100° 120°  
Electrical Characteristics (TA=25°C unless otherwise noted)  
Symbol  
ISC  
VOC  
ID  
Parameter  
Short Circuit Current  
Open Circuit Voltage  
MIN  
400  
TYP  
650  
0.40  
MAX UNITS  
TEST CONDITIONS  
VR=0V, Ee=25mW/cm2 (1)  
Ee=25mw/cm2 (1)  
mA  
V
Reverse Dark Current:  
SLD-70IR2A  
100  
100  
20  
5
nA  
nA  
nA  
nA  
nA  
pF  
ms  
ms  
%/°C  
V
nm  
nm  
VR=100mV, Ee=0  
VR=5V, Ee=0  
VR=5V, Ee=0  
VR=5V, Ee=0  
VR=5V, Ee=0  
VR=0, Ee=0, f=1MHz  
VR=5V, RL=1kW (2)  
VR=5V, RL=1kW (2)  
(1)  
SLD-70IR2B  
SLD-70IR2C  
SLD-70IR2D  
SLD-70IR2E  
1
CJ  
tR  
tF  
TCI  
VBR  
l P  
Junction Capacitance  
180  
4
6
+0.2  
50  
990  
Rise Time  
Fall Time  
Temp. Coef., ISC  
Reverse Breakdown Voltage  
Maximum Sensitivity Wavelength  
Sensitivity Spectral Range  
Acceptance Half Angle  
IR=100mA  
700  
1100  
l R  
60  
deg (off center-line)  
q1/2  
101738 REV 3  
Specifications subject to change without notice.  
5200 St. Patrick St., Montreal  
Que., H4E 4N9, Canada  
Tel: 514-768-8000  
The Old Railway, Princes Street  
Ulverston, Cumbria, LA12 7NQ, UK  
Tel: 01 229 581 551  
Fax: 514-768-8889  
Fax: 01 229 581 554  
QF-84  

与SLD-70IR2相关器件

型号 品牌 获取价格 描述 数据表
SLD70P03T Maplesemi

获取价格

TO-252
SLD750U Maplesemi

获取价格

TO-252
SLD-78018240X SAMSUNG

获取价格

General handling precautions
SLD-78018241X SAMSUNG

获取价格

General handling precautions
SLD-78018242X SAMSUNG

获取价格

General handling precautions
SLD-78018250X SAMSUNG

获取价格

General handling precautions
SLD-78018251X SAMSUNG

获取价格

General handling precautions
SLD-78018252X SAMSUNG

获取价格

General handling precautions
SLD-78018260X SAMSUNG

获取价格

General handling precautions
SLD-78018261X SAMSUNG

获取价格

General handling precautions