SLD-70C2
Planar Photodiode
Features
1.9
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Planar photodiode
Low capacitance
Fast switching time
Low leakage current
Linear response vs irradiance
Multiple dark current ranges available
Optical
Clear Epoxy
38 nom.
Red dot
Anode
5.1
7.2
Description
6.3
0.50 - 0.52
3.4
The planar photodiode is designed to operate in either
photoconductive or photovoltaic modes. High sensitivity
and low dark current allow use in even low irradiance
applications. The photodiode is supplied on a ceramic
base with a clear epoxy dome package.
Cathode
max.
Chip Size = 3.6 mm X 3.6 mm
Active Area = 9.8 sq.mm.
Dimensions in mm.(+/- 0.2)
Directional Sensitivity Characteristics
Absolute Maximum Ratings
40°
30°
20° 10°
1.0
Storage Temperature
Operating Temperature
Soldering Temperature (3)
-20°C to +75°C
-20°C to +75°C
260°C
50°
0.8
0.6
0.4
0.2
0.0
Half Angle = 60°
60°
70°
Notes: (1) Ee = source @ 2854°K.
(2) Ee = source @ l = 880 nm
(3) >2 mm from case for < 5 sec.
80°
90°
100°
1.0
0.8
0.6
0.4
20°
40°
60° 80° 100° 120°
Electrical Characteristics (TA=25°C unless otherwise noted)
Symbol
ISC
VOC
ID
Parameter
Short Circuit Current
Open Circuit Voltage
MIN
450
TYP
700
0.40
MAX
UNITS
mA
TEST CONDITIONS
VR=0V, Ee=25mW/cm2 (1)
Ee=25mw/cm2 (1)
V
Reverse Dark Current:
SLD-70C2A
100
100
20
5
nA
nA
nA
nA
nA
pF
ms
ms
%/°C
V
nm
nm
VR=100mV, Ee=0
VR=5V, Ee=0
VR=5V, Ee=0
VR=5V, Ee=0
VR=5V, Ee=0
VR=0, Ee=0, f=1MHz
VR=5V, RL=1kW (2)
VR=5V, RL=1kW (2)
(1)
SLD-70C2B
SLD-70C2C
SLD-70C2D
SLD-70C2E
1
CJ
tR
tF
TCI
VBR
Junction Capacitance
180
4
6
Rise Time
Fall Time
Temp. Coef., ISC
Reverse Breakdown Voltage
Maximum Sensitivity Wavelength
Sensitivity Spectral Range
Acceptance Half Angle
+0.2
50
IR=100mA
930
60
l P
l R
q1/2
400
1100
deg (off center-line)
101407 REV 4
Specifications subject to change without notice.
5200 St. Patrick St., Montreal
Que., H4E 4N9, Canada
Tel: 514-768-8000
The Old Railway, Princes Street
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84