Datasheet > SLD6S30A

SLD6S30A

更新时间： 2024-10-03 14:56:27

品牌	Logo	应用领域
力特 - LITTELFUSE		电子局域网（LAN）标准开关二极管电视
页数	文件大小	规格书
6页	745K
描述
SLD6S单向TVS二极管系列采用带引线改装型SMTO-263封装。它旨在保护敏感电子设备免受ESD、EFT、10/1000浪涌事件和电感性负载开关电压瞬态事件的影响，适用于条件恶劣的汽车负载突

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中文翻译

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SLD6S30A 数据手册

TVS Diodes Datasheet

SLD6S Series

Surface Mount

Pb e3

ꢀꢁꢂS

Description

The SLD6S unidirectional TVS Diode series is housed in a SMTO-

263 package with lead modifications. It is designed to protect

sensitive electronics against ESD, EFT, 10/1000 surge events and

inductive load switching voltage transient events for severe

Automotive Load Dump applications.

Features

■ AEC-Q101 qualiﬁed with

automotive grade (PPAP

capable)

■ Excellent clamping capability

■ Low incremental surge

resistance

■ SMTO-263 package, and foot

print is compatible to industrial

popular DO-218AB package

■ UL Recognized compound

meeting ﬂammability rating V-0

■ Meets MSL level 1, per

J-STD-020, High temperature

reﬂow soldering guaranteed:

260°C/10sec at terminals

■ Meet ISO7637-2 5a/5b

protection, ISO16750 and

JASO D-001 load dump test

(refer to APP note for details)

Agency Approvals

Agency

Agency File Number

■ For surface mounted

applications to optimize board

space

■ V_BR@T_J= V_BR@25°C x (1+αT

x (T_J- 25))(αT:Temperature

Coefﬁcient, typical value is

0.1%

E230531

■ Low proﬁle package

■ Matte tin lead–free plated

■ Glass passivated chip junction

in modiﬁedTO-263 package

Maximum Ratings andThermal Characteristics

■ Halogen free and RoHS

compliant

(T_A=25^OC unless otherwise noted)

■ ESD protection of data lines in

accordance with IEC 61000-4-

2, 30kV(Air), 30kV (Contact)

■ Pb-free E3 means 2nd level

interconnect is Pb-free and

the terminal ﬁnish material is

tin (Sn) (IPC/JEDEC J-STD-

609A.01)

Parameter

Symbol Value Unit

Peak Pulse Power Dissipation

1. 10ms / 150ms test waveform

2. 10μs/1000μs test waveform

Power dissipation on inﬁnite heatsink atT_A=

25 °C

Maximum Instantaneous Forward Voltage at

100A for Unidirectional only

Peak forward surge current 8.3m single half

sine-wave

Operating Junction and Storage

Temperature Range

1800

■ EFT protection of data lines in

accordance with IEC 61000-

4-4

P_PPM

4600

P_D

V_F

■ Fast response time: typically

less than 1.0ps from 0 Volts to

1.8

V_BRmin

I_FSM

800

-55 to

150

T_J, T_STG

°C

Applications

TypicalThermal Resistance Junction to case R_θJC

1.1

°C/W

Designed to protect sensitive electronics from:

TypicalThermal Resistance Junction to

R_θJA

12.3 °C/W

Ambient

■ Inductive Load Switching

■ Alternator Load Dump

Functional Diagram

ꢊꢇꢄꢋꢅꢂe

ꢌꢆꢅꢂe

ꢉꢆiꢁꢂireꢃꢄiꢅꢆꢇꢈ

Speciﬁcations are subject to change without notice.

Revised: GD. 09/27/21

12 3 4 5 6

中文翻译

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与SLD6S30A相关器件

型号	品牌	获取价格	描述	数据表
SLD6S33A	LITTELFUSE	获取价格	SLD6S单向TVS二极管系列采用带引线改装型SMTO-263封装。它旨在保护敏感电子设
SLD6S36A	LITTELFUSE	获取价格	SLD6S单向TVS二极管系列采用带引线改装型SMTO-263封装。它旨在保护敏感电子设
SLD6S40A	LITTELFUSE	获取价格	SLD6S单向TVS二极管系列采用带引线改装型SMTO-263封装。它旨在保护敏感电子设
SLD6S43A	LITTELFUSE	获取价格	SLD6S单向TVS二极管系列采用带引线改装型SMTO-263封装。它旨在保护敏感电子设
SLD6S48A	LITTELFUSE	获取价格	SLD6S单向TVS二极管系列采用带引线改装型SMTO-263封装。它旨在保护敏感电子设
SLD6S57A	LITTELFUSE	获取价格	SLD6S单向TVS二极管系列采用带引线改装型SMTO-263封装。它旨在保护敏感电子设
SLD-70BG2	SILONEX	获取价格	Infrared Rejection Filter Planar Photodiode
SLD-70BG2	ADVANCEDPHOTONIX	获取价格	Infrared Rejection Filter Planar Photodiode
SLD-70BG2A	ADVANCEDPHOTONIX	获取价格	Infrared Rejection Filter Planar Photodiode
SLD-70BG2B	ADVANCEDPHOTONIX	获取价格	Infrared Rejection Filter Planar Photodiode

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