Datasheet > SLB120N10G

SLB120N10G

更新时间： 2024-10-15 18:10:07

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美浦森 - Maplesemi		/
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8页	946K
描述
TO-263

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SLB120N10G 数据手册

SLB120N10G

100V N -Channel MOSFET

General Description

Features

- N-Channel:100V 120A

This Power MOSFET is produced using Msemitek‘s

advanced Shielding Gate MOSFET technology.

R_DS(on)Typ= 4.6mΩ@VGS = 10 V

- Very Low On-resistance R_DS(ON)

- Low Crss

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as DC/DC

converters and high efficiency switching for power

management in portable and battery operated products.

TO-263

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLB120N10G

Units

Drain-Source Voltage

100

120

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

(Note 1)

I_DM

V_GSS

E_AS

Drain Current

- Pulsed

480

Gate-Source Voltage

Single Pulsed Avalanche Energy

Power Dissipation (T_C= 25℃)

625

190

P_D

R _θJC

T_J, T_STG

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

0.66

℃/W

℃

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

300

℃

* Drain current limited by maximum junction temperature.

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.0 Apr. 2022

12 3 4 5 6 7 8

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