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SLB160N10G3 PDF预览

SLB160N10G3

更新时间: 2024-11-13 18:09:31
品牌 Logo 应用领域
美浦森 - Maplesemi /
页数 文件大小 规格书
9页 1047K
描述
TO-263

SLB160N10G3 数据手册

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SLB160N10G3  
100V N -Channel MOSFET  
General Description  
Features  
- N-Channel:100V 160A  
This Power MOSFET is produced using Msemitek‘s  
advanced Shielding Gate MOSFET technology.  
RDS(on)Typ= 3.7mΩ@VGS = 10 V  
- Very Low On-resistance RDS(ON)  
- Low Crss  
- Fast switching  
- 100% avalanche tested  
- Improved dv/dt capability  
This advanced technology has been especially tailored  
to minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for low voltage applications such as DC/DC  
converters and high efficiency switching for power  
management in portable and battery operated products.  
D
G
TO-263  
S
Absolute Maximum Ratings  
TC = 25°C unless otherwise noted  
Symbol  
Parameter  
SLB160N10G3  
Units  
V
Drain-Source Voltage  
100  
160  
102  
480  
VDSS  
Drain Current  
- Continuous (TC = 25)  
A
ID  
- Continuous (TC = 100)  
A
(Note 1)  
IDM  
VGSS  
EAS  
Drain Current  
- Pulsed  
A
Gate-Source Voltage  
25  
±
V
Single Pulsed Avalanche Energy  
Power Dissipation (TC = 25)  
1050  
mJ  
210  
PD  
W
Power Dissipation (TC = 100)  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to ambient  
Operating and Storage Temperature Range  
1.4  
R θJC  
R θJA  
0.72  
/W  
/W  
-
TJ, TSTG  
-55 to +150  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
TL  
300  
* Drain current limited by maximum junction temperature.  
Msemitek Co., Ltd  
http://www.msemitek.com  
Rev1.0 Oct. 2020  

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