Datasheet > SLB150N06T

SLB150N06T

更新时间： 2024-11-18 18:09:47

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
8页	987K
描述
TO-263

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SLB150N06T 数据手册

SLB150N06T

60V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Msemitek‘s

- 150A, 60V, R_DS(on)Typ= 3.1mΩ@V_GS= 10 V

- Very Low On-resistance R_DS(ON)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

advanced TRENCH technology.

This advanced technology has been especially tailored

to minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

Application

PWM Application

Load Switch

Power Management

TO-263

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLB150N06T

Units

Drain-Source Voltage

150

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

(Note 1)

I_DM

V_GSS

EAS

E_AR

Drain Current

- Pulsed

450

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

552

200

V/ns

dv/dt

P_D

Peak Diode Recovery dv/dt

4.5

Power Dissipation (T_C= 25℃)

238

R _θJC

T_J, T_STG

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

0.53

℃/W

℃

-55 to +150

T_L

300

℃

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Msemitek Co., Ltd

http://www.msemitek.com

Rev. 1.0 Aug. 2022

12 3 4 5 6 7 8

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