Datasheet > SLB150N06G

SLB150N06G

更新时间： 2024-10-15 18:09:59

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
8页	988K
描述
TO-263

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SLB150N06G 数据手册

SLB150N06G

60V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Msemitek‘s

advanced Shielding Gate MOSFET technology.

- 150A, 60V, R_DS(on)Typ= 2.4mΩ@V_GS= 10 V

- Very Low On-resistance R_DS(ON)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as DC/DC

converters and high efficiency switching for power

management in portable and battery operated products.

TO-263

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLB150N06G

Units

Drain-Source Voltage

150

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

(Note 1)

I_DM

Drain Current

- Pulsed

450

V_GSS

EAS

E_AR

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

552

240

V/ns

dv/dt

4.5

192

P_D

- Derate above 25℃

1.54

W/℃

℃

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

T_L

300

℃

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

SLB150N06G

0.65

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

62.5

R_θJA

Msemitek Co., Ltd

http://www.msemitek.com

Rev. 1.0 Sep. 2022

12 3 4 5 6 7 8

中文翻译

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